Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

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Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures)

January 2010

Volume 28, Issue 1, pp. C1A1-216

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International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009) Plenary Session Advanced Anneals and Implant Technology 1-D Metrology 2D Metrology 3D Metrology with Atom Probe Defects, Dopant Diffusion and Deactivation Modeling and Simulation Metrology, Simulation and Integration of Non-Planar Devices Silicides and Source/Drain Engineering Preface 1-D Metrology 2D Metrology Modeling and Simulation Silicides and Source/Drain Engineering Letters Review Article Regular Articles Errata

International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009) Plenary Session [ Next Subject | Issue Index | Top / Bottom of Page]
	Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm Lourdes Pelaz, Luis A. Marqués, María Aboy, Iván Santos, Pedro López, and Ray Duffy pp. C1A1-C1A6 Abstract   Full Text: [ HTML PDF  (710 kB)  ]    Order
Advanced Anneals and Implant Technology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment Damiano Giubertoni, Giancarlo Pepponi, Mehmet Alper Sahiner, Stephen P. Kelty, Salvatore Gennaro, Massimo Bersani, Max Kah, Karen J. Kirkby, Roisin Doherty, Majeed A. Foad, F. Meirer, C. Streli, Joseph C. Woicik, and Piero Pianetta pp. C1B1-C1B5 Abstract   Full Text: [ HTML PDF  (383 kB)  ]    Order
1-D Metrology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves Janusz Bogdanowicz, Fabian Dortu, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Ngoc Duy Nguyen, Derrick Shaughnessy, Alex Salnik, and Lena Nicolaides pp. C1C1-C1C7 Abstract   Full Text: [ HTML PDF  (573 kB)  ]    Order
	Photovoltage versus microprobe sheet resistance measurements on ultrashallow structures Trudo Clarysse, Alain Moussa, Brigitte Parmentier, Janusz Bogdanowicz, Wilfried Vandervorst, Hugo Bender, Markus Pfeffer, Martin Schellenberger, Peter F. Nielsen, Sune Thorsteinsson, Rong Lin, and Dirch Petersen pp. C1C8-C1C14 Abstract   Full Text: [ HTML PDF  (405 kB)  ]    Order
2D Metrology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques Shu Qin, Wendy Morinville, Kent Zhuang, Francois Fabreguette, Allen McTeer, Y. Jeff Hu, and Shifeng Lu pp. C1D1-C1D4 Abstract   Full Text: [ HTML PDF  (495 kB)  ]    Order
	Electron holography for analysis of deep submicron devices: Present status and challenges Nobuyuki Ikarashi, Akio Toda, Kazuya Uejima, Koichi Yako, Toyoji Yamamoto, Masami Hane, and Hiroshi Sato pp. C1D5-C1D10 Abstract   Full Text: [ HTML PDF  (534 kB)  ]    Order
3D Metrology with Atom Probe [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Dopant measurements in semiconductors with atom probe tomography P. A. Ronsheim, M. Hatzistergos, and S. Jin pp. C1E1-C1E4 Abstract   Full Text: [ HTML PDF  (319 kB)  ]    Order
Defects, Dopant Diffusion and Deactivation [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Effect of n- and p-type dopants on patterned amorphous regrowth S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman pp. C1F1-C1F5 Abstract   Full Text: [ HTML PDF  (594 kB)  ]    Order
Modeling and Simulation [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model Kilian Vollenweider, Beat Sahli, Nikolas Zographos, and Christoph Zechner pp. C1G1-C1G6 Abstract   Full Text: [ HTML PDF  (288 kB)  ]    Order
	Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies Tom Herrmann, Stefan Flachowsky, Ralf Illgen, Wilfried Klix, Roland Stenzel, Jan Höntschel, Thomas Feudel, and Manfred Horstmann pp. C1G7-C1G11 Abstract   Full Text: [ HTML PDF  (284 kB)  ]    Order
Metrology, Simulation and Integration of Non-Planar Devices [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Exploring doping options and variability of trigate transistors using atomistic process and device simulations Ignacio Martin-Bragado, Victor Moroz, and Munkang Choi pp. C1H1-C1H4 Abstract   Full Text: [ HTML PDF  (359 kB)  ]    Order
	Experimental studies of dose retention and activation in fin field-effect-transistor-based structures Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, and Wilfried Vandervorst pp. C1H5-C1H13 Abstract   Full Text: [ HTML PDF  (4899 kB)  ]    Order
Silicides and Source/Drain Engineering [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Interaction of NiSi with dopants for metallic source/drain applications Jun Luo, Zhi-Jun Qiu, Zhen Zhang, Mikael Östling, and Shi-Li Zhang pp. C1I1-C1I11 Abstract   Full Text: [ HTML PDF  (720 kB)  ]    Order
Preface [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Preface Jerry Hunter and Michael Gribelyuk p. C1a1 Abstract   Full Text: [ HTML PDF  (24 kB)  ]    Order
1-D Metrology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Photoreflectance characterization of ultrashallow junction activation in millisecond annealing Will Chism, Michael Current, and Victor Vartanian pp. C1C15-C1C20 Abstract   Full Text: [ HTML PDF  (742 kB)  ]    Order
	Study of submelt laser induced junction nonuniformities using Therma-Probe Erik Rosseel, Janusz Bogdanowicz, Trudo Clarysse, Wilfried Vandervorst, Claude Ortolland, Thomas Hoffmann, Alex Salnik, Lena Nicolaides, Sang-Hyun Han, Dirch H. Petersen, Rong Lin, and Ole Hansen pp. C1C21-C1C26 Abstract   Full Text: [ HTML PDF  (855 kB)  ]    Order
	Review of electrical characterization of ultra-shallow junctions with micro four-point probes Dirch H. Petersen, Ole Hansen, Torben M. Hansen, Peter Bøggild, Rong Lin, Daniel Kjær, Peter F. Nielsen, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Nick S. Bennett, and Nick E. B. Cowern pp. C1C27-C1C33 Abstract   Full Text: [ HTML PDF  (488 kB)  ]    Order
	Sensitivity study of micro four-point probe measurements on small samples Fei Wang, Dirch H. Petersen, Torben M. Hansen, Toke R. Henriksen, Peter Bøggild, and Ole Hansen pp. C1C34-C1C40 Abstract   Full Text: [ HTML PDF  (3977 kB)  ]    Order
	Electrical characterization of InGaAs ultra-shallow junctions Dirch H. Petersen, Ole Hansen, Peter Bøggild, Rong Lin, Peter F. Nielsen, Dennis Lin, Christoph Adelmann, Alireza Alian, Clement Merckling, Julien Penaud, Guy Brammertz, Jozefien Goossens, Wilfried Vandervorst, and Trudo Clarysse pp. C1C41-C1C47 Abstract   Full Text: [ HTML PDF  (608 kB)  ]    Order
	Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants A. Merkulov, P. Peres, S. Choi, F. Horreard, H.-U. Ehrke, N. Loibl, and M. Schuhmacher pp. C1C48-C1C53 Abstract   Full Text: [ HTML PDF  (560 kB)  ]    Order
	Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy H.-U. Ehrke, N. Loibl, M. P. Moret, F. Horréard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, and M. Schuhmacher pp. C1C54-C1C58 Abstract   Full Text: [ HTML PDF  (383 kB)  ]    Order
	Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon G. Pepponi, D. Giubertoni, M. Bersani, F. Meirer, D. Ingerle, G. Steinhauser, C. Streli, P. Hoenicke, and B. Beckhoff pp. C1C59-C1C64 Abstract   Full Text: [ HTML PDF  (154 kB)  ]    Order
	High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers M. A. Reading, J. A. van den Berg, P. C. Zalm, D. G. Armour, P. Bailey, T. C. Q. Noakes, A. Parisini, T. Conard, and S. De Gendt pp. C1C65-C1C70 Abstract   Full Text: [ HTML PDF  (691 kB)  ]    Order
	Application of the Storing Matter technique to the analysis of semiconductor materials C. Mansilla and T. Wirtz pp. C1C71-C1C76 Abstract   Full Text: [ HTML PDF  (619 kB)  ]    Order
	Comparative study of native oxide impacts on low energy doping processes Shu Qin, Allen McTeer, Kent Zhuang, Wendy Morinville, and Shifeng Lu pp. C1C77-C1C83 Abstract   Full Text: [ HTML PDF  (767 kB)  ]    Order
	Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques Damiano Giubertoni, Erica Iacob, P. Hoenicke, B. Beckhoff, Giancarlo Pepponi, Salvatore Gennaro, and Massimo Bersani pp. C1C84-C1C89 Abstract   Full Text: [ HTML PDF  (384 kB)  ]    Order
2D Metrology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Quantitative dopant profiling of p-n junction in InGaAs/AlGaAs light-emitting diode using off-axis electron holography Suk Chung, Shane R. Johnson, Ding Ding, Yong-Hang Zhang, David J. Smith, and Martha R. McCartney pp. C1D11-C1D14 Abstract   Full Text: [ HTML PDF  (452 kB)  ]    Order
Modeling and Simulation [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors Stefan Flachowsky, Ralf Illgen, Tom Herrmann, Wilfried Klix, Roland Stenzel, Ina Ostermay, Andreas Naumann, Andy Wei, Jan Höntschel, and Manfred Horstmann pp. C1G12-C1G17 Abstract   Full Text: [ HTML PDF  (589 kB)  ]    Order
	Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys Renyu Chen and Scott T. Dunham pp. C1G18-C1G23 Abstract   Full Text: [ HTML PDF  (468 kB)  ]    Order
Silicides and Source/Drain Engineering [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing Ralf Illgen, Stefan Flachowsky, Tom Herrmann, Wilfried Klix, Roland Stenzel, Thomas Feudel, Jan Höntschel, and Manfred Horstmann pp. C1I12-C1I16 Abstract   Full Text: [ HTML PDF  (551 kB)  ]    Order
Letters
	Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylate M. A. Mohammad, T. Fito, J. Chen, M. Aktary, M. Stepanova, and S. K. Dew pp. L1-L4 Abstract   Full Text: [ HTML PDF  (296 kB)  ]    Order
	Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors Byung-Hwan Chu, Hon-Way Lin, Shangjr Gwo, Yu-Lin Wang, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicuni, and Fan Ren pp. L5-L8 Abstract   Full Text: [ HTML PDF  (236 kB)  ]    Order
Review Article
	Low-dimensional oxide nanostructures on metals: Hybrid systems with novel properties Falko P. Netzer, Francesco Allegretti, and Svetlozar Surnev pp. 1-16 Abstract   Full Text: [ HTML PDF  (1272 kB)  ]    Order
Regular Articles
	Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors E. Mairiaux, L. Desplanque, X. Wallart, and M. Zaknoune pp. 17-20 Abstract   Full Text: [ HTML PDF  (201 kB)  ]    Order
	Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching Christian Kallesøe, Kristian Mølhave, Kasper F. Larsen, Daniel Engstrøm, Torben M. Hansen, Peter Bøggild, Thomas Mårtensson, Magnus Borgström, and Lars Samuelson pp. 21-26 Abstract   Full Text: [ HTML PDF  (727 kB)  ]    Order
	Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes Hong-Yeol Kim, Jihyun Kim, F. Ren, and Soohwan Jang pp. 27-29 Abstract   Full Text: [ HTML PDF  (228 kB)  ]    Order
	Step-width adjustment in fabrication of staircase structures P. Li, S.-Y. Lee, S. C. Jeon, J. S. Kim, K. N. Kim, M. S. Hyun, J. J. Yoo, and J. W. Kim pp. 30-35 Abstract   Full Text: [ HTML PDF  (528 kB)  ]    Order
	Fully automated hot embossing processes utilizing high resolution working stamps T. Glinsner, T. Veres, G. Kreindl, E. Roy, K. Morton, T. Wieser, C. Thanner, D. Treiblmayr, R. Miller, and P. Lindner pp. 36-41 Abstract   Full Text: [ HTML PDF  (1688 kB)  ]    Order
	Graphoepitaxy of block copolymers using selectively removable templates F. Ilievski and C. A. Ross pp. 42-44 Abstract   Full Text: [ HTML PDF  (358 kB)  ]    Order
	Effect of process related and haze defects on 193  nm immersion lithography C. J. Tay, C. Quan, M. L. Ling, Q. Lin, and G. S. Chua pp. 45-51 Abstract   Full Text: [ HTML PDF  (733 kB)  ]    Order
	Passivation of AlN/GaN high electron mobility transistor using ozone treatment C. F. Lo, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, and F. Ren pp. 52-55 Abstract   Full Text: [ HTML PDF  (349 kB)  ]    Order
	Advanced in situ pre-Ni silicide (Siconi) cleaning at 65  nm to resolve defects in NiSix modules Ruipeng Yang, Na Su, Paolo Bonfanti, Jiaxiang Nie, Jay Ning, and Tomi T. Li pp. 56-61 Abstract   Full Text: [ HTML PDF  (600 kB)  ]    Order
	Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayers F. Zeng, B. Fan, Y. C. Yang, P. Y. Yang, J. T. Luo, C. Chen, F. Pan, and W. S. Yan pp. 62-65 Abstract   Full Text: [ HTML PDF  (423 kB)  ]    Order
	Optimization of layer structure supporting long range surface plasmons for surface plasmon-enhanced fluorescence spectroscopy biosensors Chun Jen Huang, Jakub Dostalek, and Wolfgang Knoll pp. 66-72 Abstract   Full Text: [ HTML PDF  (284 kB)  ]    Order
	Analysis and metrology with a focused helium ion beam Sybren Sijbrandij, John Notte, Larry Scipioni, Chuong Huynh, and Colin Sanford pp. 73-77 Abstract   Full Text: [ HTML PDF  (510 kB)  ]    Order
	Direct thermal-UV nanoimprint of an iron-containing organometallic hybrid film Huilan Han, Abhinav Bhushan, Frank Yaghmaie, and Cristina E. Davis pp. 78-81 Abstract   Full Text: [ HTML PDF  (231 kB)  ]    Order
	Sub-200  nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure F. Hamouda, G. Barbillon, F. Gaucher, and B. Bartenlian pp. 82-85 Abstract   Full Text: [ HTML PDF  (263 kB)  ]    Order
	Making high-fidelity imprint template by resist patterns over a flexible conductive polymer substrate Xiangdong Ye, Yucheng Ding, Yugang Duan, Hongzhong Liu, and Jinyou Shao pp. 86-89 Abstract   Full Text: [ HTML PDF  (514 kB)  ]    Order
	Spin-coatable HfO2 resist for optical and electron beam lithographies M. S. M. Saifullah, M. Z. R. Khan, David G. Hasko, Eunice S. P. Leong, Xue L. Neo, Eunice T. L. Goh, David Anderson, Geraint A. C. Jones, and Mark E. Welland pp. 90-95 Abstract   Full Text: [ HTML PDF  (653 kB)  ]    Order
	640×480  pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target M. Nanba, Y. Takiguchi, Y. Honda, Y. Hirano, T. Watabe, N. Egami, K. Miya, K. Nakamura, M. Taniguchi, S. Itoh, and A. Kobayashi pp. 96-103 Abstract   Full Text: [ HTML PDF  (430 kB)  ]    Order
	Roller-reversal imprint process for preparation of large-area microstructures Hongzhong Liu, Weitao Jiang, Yucheng Ding, Yongsheng Shi, and Lei Yin pp. 104-109 Abstract   Full Text: [ HTML PDF  (533 kB)  ]    Order
	Microstructures and magnetic properties of amorphous TbxCo1−x films deposited by facing target magnetron-sputtering system with divergent magnetic field Taewan Kim, Hyun-Yong Lee, Kyungil Lee, and Jae Youn Hwang pp. 110-115 Abstract   Full Text: [ HTML PDF  (617 kB)  ]    Order
	Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young-Woo Heo, S. Y. Son, and J. H. Yuh pp. 116-119 Abstract   Full Text: [ HTML PDF  (393 kB)  ]    Order
	Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas B. S. Kwon, J. S. Kim, N.-E. Lee, and S. K. Lee pp. 120-127 Abstract   Full Text: [ HTML PDF  (339 kB)  ]    Order
	Four beams surface plasmon interference nanoscale lithography for patterning of two-dimensional periodic features K. V. Sreekanth and V. M. Murukeshan pp. 128-130 Abstract   Full Text: [ HTML PDF  (453 kB)  ]    Order
	Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching Sunghoon Lee, Jinho Oh, Kyumin Lee, and Hyunchul Sohn pp. 131-137 Abstract   Full Text: [ HTML PDF  (316 kB)  ]    Order
	Room-temperature capillary-imprint lithography for making micro-/nanostructures in large areas Xiangdong Ye, Yucheng Ding, Yugang Duan, Hongzhong Liu, and Bingheng Lu pp. 138-142 Abstract   Full Text: [ HTML PDF  (634 kB)  ]    Order
	Parameter study for silicon grass formation in Bosch process KyuBong Jung, WooJin Song, Hyun Woo Lim, and Caroline Sunyong Lee pp. 143-148 Abstract   Full Text: [ HTML PDF  (669 kB)  ]    Order
	Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy M. Darnon, T. Chevolleau, T. David, J. Ducote, N. Posseme, R. Bouyssou, F. Bailly, D. Perret, and O. Joubert pp. 149-156 Abstract   Full Text: [ HTML PDF  (718 kB)  ]    Order
	GaAs/AlOx micropillar fabrication for small mode volume photon sources John M. Choi, Kevin L. Silverman, Martin J. Stevens, Todd L. Harvey, and Richard P. Mirin pp. 157-162 Abstract   Full Text: [ HTML PDF  (594 kB)  ]    Order
	Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer Xing Wei, Aimin Wu, Xiang Wang, Xianyuan Li, Fei Ye, Jie Chen, Meng Chen, Bo Zhang, Chenglu Li, Miao Zhang, and Xi Wang pp. 163-168 Abstract   Full Text: [ HTML PDF  (741 kB)  ]    Order
	Stenciled conducting bismuth nanowires Veronica Savu, Sam Neuser, Guillermo Villanueva, Oscar Vazquez-Mena, Katrin Sidler, and Juergen Brugger pp. 169-172 Abstract   Full Text: [ HTML PDF  (274 kB)  ]    Order
	Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H2 downstream plasma Kris Vanstreels and Adam M. Urbanowicz pp. 173-179 Abstract   Full Text: [ HTML PDF  (470 kB)  ]    Order
	Surface topography and physicochemistry of silver containing titanium nitride nanocomposite coatings Kathryn Whitehead, Peter Kelly, Heqing Li, and Joanna Verran pp. 180-187 Abstract   Full Text: [ HTML PDF  (912 kB)  ]    Order
	Effects of silver deposition on 405  nm light-driven zinc oxide photocatalyst Shigeyuki Seki, Takumi Sekizawa, Koichi Haga, Tomoaki Sato, Mitsuhiro Takeda, Yoshiyuki Seki, Yutaka Sawada, Kunio Yubuta, and Toetsu Shishido pp. 188-193 Abstract   Full Text: [ HTML PDF  (950 kB)  ]    Order
	Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratings C. Constancias, B. Dalzotto, P. Michallon, J. Wallace, and M. Saib pp. 194-197 Abstract   Full Text: [ HTML PDF  (250 kB)  ]    Order
	Magnetic soft x-ray imaging of vortex core dynamics Brooke L. Mesler, Kristen Buchanan, Mi-Young Im, Erik Anderson, and Peter Fischer pp. 198-201 Abstract   Full Text: [ HTML PDF  (293 kB)  ]    Order
	Scratch properties of nickel thin films using atomic force microscopy Ampere A. Tseng, Jun-ichi Shirakashi, Shyankay Jou, Jen-Ching Huang, and T. P. Chen pp. 202-210 Abstract   Full Text: [ HTML PDF  (455 kB)  ]    Order
	Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature A. K. Chu, T. I. Hong, and W. C. Tien pp. 211-215 Abstract   Full Text: [ HTML PDF  (572 kB)  ]    Order
Errata
	Erratum: “Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules” [J. Vac. Sci. Technol. B 27, 2209 (2009)] Sarah E. O'Donnell and Petra Reinke p. 216 Abstract   Full Text: [ HTML PDF  (27 kB)  ]    Order

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