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Cover image from A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder, M. Burghammer, and C. G. Schroer, Appl. Phys. Lett. 96, 091102 (2010). Enlarge the Image | Read the Article

Applied Physics Letters -- 1 March 2010

Volume 96, Issue 9 , Articles (09xxxx)

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	Enhanced terahertz emission from a multilayered low temperature grown GaAs structure Samir Rihani, Richard Faulks, Harvey E. Beere, Ian Farrer, Michael Evans, David A. Ritchie, and Michael Pepper Appl. Phys. Lett. 96, 091101 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (450 kB)  ]    Order
	Hard x-ray nanobeam characterization by coherent diffraction microscopy A. Schropp, P. Boye, J. M. Feldkamp, R. Hoppe, J. Patommel, D. Samberg, S. Stephan, K. Giewekemeyer, R. N. Wilke, T. Salditt, J. Gulden, A. P. Mancuso, I. A. Vartanyants, E. Weckert, S. Schöder et al. Appl. Phys. Lett. 96, 091102 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (266 kB)  ]    Order
	Transient thermoreflectance imaging of active photonic crystals Virginie Moreau, Gilles Tessier, Fabrice Raineri, Maia Brunstein, Alejandro Yacomotti, Rama Raj, Isabelle Sagnes, Ariel Levenson, and Yannick De Wilde Appl. Phys. Lett. 96, 091103 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (1069 kB)  ]    Order
	Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer Kyu Sang Kim, Jin Ha Kim, Su Jin Jung, Yong Jo Park, and S. N. Cho Appl. Phys. Lett. 96, 091104 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (368 kB)  ]    Order
	Competitiveness between direct and indirect radiative transitions of Ge T.-H. Cheng, C.-Y. Ko, C.-Y. Chen, K.-L. Peng, G.-L. Luo, C. W. Liu, and H.-H. Tseng Appl. Phys. Lett. 96, 091105 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (448 kB)  ]    Order
	Ultrathin Cu-Ti bilayer transparent conductors with enhanced figure-of-merit and stability D. S. Ghosh, T. L. Chen, and V. Pruneri Appl. Phys. Lett. 96, 091106 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (396 kB)  ]    Order
	Luminescence-induced photorefractive spatial solitons E. Fazio, M. Alonzo, F. Devaux, A. Toncelli, N. Argiolas, M. Bazzan, C. Sada, and M. Chauvet Appl. Phys. Lett. 96, 091107 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (211 kB)  ]    Order
	The influence of impurities on the performance of the dielectric barrier discharge T. Martens, A. Bogaerts, W. J. M. Brok, and J. van Dijk Appl. Phys. Lett. 96, 091501 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (242 kB)  ]    Order
	An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices Christoph T. Koch, V. Burak Özdöl, and Peter A. van Aken Appl. Phys. Lett. 96, 091901 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (452 kB)  ]    Order
	Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing H. F. Liu and S. J. Chua Appl. Phys. Lett. 96, 091902 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (604 kB)  ]    Order
	Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects L. S. Chen, W. H. Bang, Young-Joon Park, E. Todd Ryan, Sean King, and Choong-Un Kim Appl. Phys. Lett. 96, 091903 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (133 kB)  ]    Order
	Optical anisotropies of Si grown on step-graded SiGe(110) layers R. E. Balderas-Navarro, L. F. Lastras-Martínez, K. Arimoto, R. Castro-García, O. Villalobos-Aguilar, A. Lastras-Martínez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami, and K. Nakajima Appl. Phys. Lett. 96, 091904 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (409 kB)  ]    Order
	Hexagonal BaTi1−xCoxO3 phase stabilized by Co dopants Yuanyuan Li, Qinghua Liu, Tao Yao, Zhiyun Pan, Zhihu Sun, Yong Jiang, Hong Zhang, Zijia Pan, Wensheng Yan, and Shiqiang Wei Appl. Phys. Lett. 96, 091905 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (272 kB)  ]    Order
	Magneto-optical properties of cobalt slanted columnar thin films Daniel Schmidt, Tino Hofmann, Craig M. Herzinger, Eva Schubert, and Mathias Schubert Appl. Phys. Lett. 96, 091906 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (252 kB)  ]    Order
	Highly polarized Raman scattering anisotropy in single GaN nanowires E. O. Schäfer-Nolte, T. Stoica, T. Gotschke, F. Limbach, E. Sutter, P. Sutter, and R. Calarco Appl. Phys. Lett. 96, 091907 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (684 kB)  ]    Order
	Towards second-harmonic generation micropatterning of glass surface Aurelien Delestre, Michel Lahaye, Evelyne Fargin, Matthieu Bellec, Arnaud Royon, Lionel Canioni, Marc Dussauze, Frederic Adamietz, and Vincent Rodriguez Appl. Phys. Lett. 96, 091908 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (304 kB)  ]    Order
	A surface locking instability for atomic intercalation into a solid electrode Hamed Haftbaradaran, Huajian Gao, and W. A. Curtin Appl. Phys. Lett. 96, 091909 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (316 kB)  ]    Order
	Solid fraction in dendritic solidification of a liquid Lasse Makkonen Appl. Phys. Lett. 96, 091910 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (123 kB)  ]    Order
	Anharmonic decay of g-process longitudinal optical phonons in silicon Z. Aksamija and U. Ravaioli Appl. Phys. Lett. 96, 091911 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (97 kB)  ]    Order
	The response of mechanical and electronic properties of graphane to the elastic strain M. Topsakal, S. Cahangirov, and S. Ciraci Appl. Phys. Lett. 96, 091912 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (338 kB)  ]    Order
	Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy T. Onuma, A. Uedono, H. Asamizu, H. Sato, J. F. Kaeding, M. Iza, S. P. DenBaars, S. Nakamura, and S. F. Chichibu Appl. Phys. Lett. 96, 091913 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (167 kB)  ]    Order
	Roles of carbon in light emission of ZnO Y. H. Lu, Z. X. Hong, Y. P. Feng, and S. P. Russo Appl. Phys. Lett. 96, 091914 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (375 kB)  ]    Order
	Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate Wei Zhao, Ru-Zhi Wang, Xue-Mei Song, Hao Wang, Bo Wang, Hui Yan, and Paul K. Chu Appl. Phys. Lett. 96, 092101 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (490 kB)  ]    Order
	Electron beam induced current investigations of Pt/SrTiO3−x interface exposed to chemical and electrical stresses W. Jiang, D. Evans, J. A. Bain, M. Skowronski, and P. A. Salvador Appl. Phys. Lett. 96, 092102 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (292 kB)  ]    Order
	Fabrication and characterization of an induced GaAs single hole transistor O. Klochan, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, and Y. Hirayama Appl. Phys. Lett. 96, 092103 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (257 kB)  ]    Order
	Influence of Na on Cu(In,Ga)Se2 solar cells grown on polyimide substrates at low temperature: Impact on the Cu(In,Ga)Se2/Mo interface R. Caballero, C. A. Kaufmann, T. Eisenbarth, A. Grimm, I. Lauermann, T. Unold, R. Klenk, and H. W. Schock Appl. Phys. Lett. 96, 092104 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (508 kB)  ]    Order
	Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film Hyunji Son, Sunjae Chung, Sun-young Yea, Shinhee Kim, Taehee Yoo, Sanghoon Lee, X. Liu, and J. K. Furdyna Appl. Phys. Lett. 96, 092105 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (258 kB)  ]    Order
	Influence of 4f electronic states on the surface states of rare-earth hexaborides Swapnil Patil, Ganesh Adhikary, Geetha Balakrishnan, and Kalobaran Maiti Appl. Phys. Lett. 96, 092106 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (188 kB)  ]    Order
	Electron mobility increase in submicronic transistors integrated on ultrathin silicon membranes subjected to high mechanical stress Bogdan Bercu, Laurent Montès, Florent Rochette, Mireille Mouis, Xu Xin, and Panagiota Morfouli Appl. Phys. Lett. 96, 092107 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (303 kB)  ]    Order
	Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability Moon Hyung Jang, Seung Jong Park, Dong Hyeok Lim, Sung Jin Park, Mann-Ho Cho, Seong Jin Cho, Yoon Ho Cho, and Jong-Heun Lee Appl. Phys. Lett. 96, 092108 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (216 kB)  ]    Order
	Electronic properties of ultrananocrystalline diamond surfaces Simon Q. Lud, Martin Niedermeier, Philipp S. Koch, Paola Bruno, Dieter M. Gruen, Martin Stutzmann, and Jose A. Garrido Appl. Phys. Lett. 96, 092109 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (215 kB)  ]    Order
	Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices Markus Hofstetter, John Howgate, Ian D. Sharp, Maren Funk, Martin Stutzmann, Herwig G. Paretzke, and Stefan Thalhammer Appl. Phys. Lett. 96, 092110 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (332 kB)  ]    Order
	Junction properties of Au/ZnO single nanowire Schottky diode Sachindra Nath Das, Ji-Huck Choi, Jyoti Prakash Kar, Kyeong-Ju Moon, Tae Il Lee, and Jae-Min Myoung Appl. Phys. Lett. 96, 092111 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (205 kB)  ]    Order
	Current fluctuations in three-dimensionally stacked Si nanocrystals thin films Xin Zhou, Ken Uchida, and Shunri Oda Appl. Phys. Lett. 96, 092112 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (291 kB)  ]    Order
	Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor Ran Cheng, Bin Liu, and Yee-Chia Yeo Appl. Phys. Lett. 96, 092113 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (157 kB)  ]    Order
	Fe diffusion, oxidation, and reduction at the CoFeB/MgO interface studied by soft x-ray absorption spectroscopy and magnetic circular dichroism A. T. Hindmarch, K. J. Dempsey, D. Ciudad, E. Negusse, D. A. Arena, and C. H. Marrows Appl. Phys. Lett. 96, 092501 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (291 kB)  ]    Order
	Fourfold symmetric anisotropic magnetoresistance based on magnetocrystalline anisotropy and antiphase boundaries in reactive sputtered epitaxial Fe3O4 films P. Li, E. Y. Jiang, and H. L. Bai Appl. Phys. Lett. 96, 092502 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (713 kB)  ]    Order
	The role of carriers in spin current and magnetic coupling for ZnO:Co diluted magnetic oxides H. Chou, C. P. Lin, H. S. Hsu, and S. J. Sun Appl. Phys. Lett. 96, 092503 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (167 kB)  ]    Order
	Vector magnetic field microscopy using nitrogen vacancy centers in diamond B. J. Maertz, A. P. Wijnheijmer, G. D. Fuchs, M. E. Nowakowski, and D. D. Awschalom Appl. Phys. Lett. 96, 092504 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (271 kB)  ]    Order
	Interplay between crystallographic orientation and electric transport properties in La2/3Sr1/3MnO3 films A. Tebano, A. Orsini, D. Di Castro, P. G. Medaglia, and G. Balestrino Appl. Phys. Lett. 96, 092505 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (236 kB)  ]    Order
	Effect of antiferromagnetic order on the dielectric properties of Bi2Fe4O9 Y. A. Park, K. M. Song, K. D. Lee, C. J. Won, and N. Hur Appl. Phys. Lett. 96, 092506 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (236 kB)  ]    Order
	Ultrabroad bandwidth of single-layer electromagnetic attenuation composites with flaky fillers Z. W. Li, Z. H. Yang, and L. B. Kong Appl. Phys. Lett. 96, 092507 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (266 kB)  ]    Order
	Mesostructural origin of stress-induced magnetic anisotropy in Fe-based nanocrystalline ribbons Y. Z. Fang, J. J. Zheng, F. M. Wu, Q. M. Xu, J. Q. Zhang, H. Q. Ye, J. L. Zheng, and T. Y. Li Appl. Phys. Lett. 96, 092508 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (379 kB)  ]    Order
	Large enhancement of anisotropic magnetoresistance and thermal stability in Ta/NiFe/Ta trilayers with interfacial Pt addition Y. F. Liu, J. W. Cai, and L. Sun Appl. Phys. Lett. 96, 092509 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (153 kB)  ]    Order
	Strain-driven spin reorientation in magnetite/barium titanate heterostructures G. E. Sterbinsky, B. W. Wessels, J.-W. Kim, E. Karapetrova, P. J. Ryan, and D. J. Keavney Appl. Phys. Lett. 96, 092510 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (110 kB)  ]    Order
	Co-concentration dependence of half-metallic properties in Co–Mn–Si epitaxial films Y. Sakuraba, N. Hirose, M. Oogane, T. Nakamura, Y. Ando, and K. Takanashi Appl. Phys. Lett. 96, 092511 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (414 kB)  ]    Order
	Suppression of flux avalanches in superconducting films by electromagnetic braking F. Colauto, E. Choi, J. Y. Lee, S. I. Lee, E. J. Patiño, M. G. Blamire, T. H. Johansen, and W. A. Ortiz Appl. Phys. Lett. 96, 092512 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (318 kB)  ]    Order
	Giant conductance anisotropy in magnetically coupled Ferromagnet-Superconductor-Ferromagnet structures A. Belkin, V. Novosad, M. Iavarone, R. Divan, J. Hiller, T. Proslier, J. E. Pearson, and G. Karapetrov Appl. Phys. Lett. 96, 092513 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (280 kB)  ]    Order
	Origin of anomalous hysteresis loops induced by femtosecond laser pulses in GdFeCo amorphous films Chudong Xu, Zhifeng Chen, Daxin Chen, Shiming Zhou, and Tianshu Lai Appl. Phys. Lett. 96, 092514 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (229 kB)  ]    Order
	Observation of domain structure in 001 orientated NaNbO3 films deposited on (001)SrTiO3 substrates by laser beam scanning microscopy Seiji Yamazoe, Hiroyuki Sakurai, Takehisa Saito, and Takahiro Wada Appl. Phys. Lett. 96, 092901 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (332 kB)  ]    Order
	Optimization of piezoelectric properties for [001]c poled 0.94Pb(Zn1/3Nb2/3)O3–0.06PbTiO3 single crystals Yang Xiang, Rui Zhang, and Wenwu Cao Appl. Phys. Lett. 96, 092902 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (160 kB)  ]    Order
	Polarization inversion in a ferroelectric liquid crystal studied by 1H nuclear magnetic resonance J. K. Cha, K. W. Lee, Cheol Eui Lee, and J.-I. Jin Appl. Phys. Lett. 96, 092903 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (263 kB)  ]    Order
	Microstress relaxation effect of Pb(Zr0.52Ti0.48)O3 films with thicknesses for micro/nanopiezoelectric device Jeong Hoon Lee, Kyo Seon Hwang, and Tae Song Kim Appl. Phys. Lett. 96, 092904 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (199 kB)  ]    Order
	Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures Srikant Jayanti, Xiangyu Yang, Daniel J. Lichtenwalner, and Veena Misra Appl. Phys. Lett. 96, 092905 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (610 kB)  ]    Order
	Mechanism of morphological transition in heteroepitaxial growth of metal films Cui-Lian Li and Chin-Kun Hu Appl. Phys. Lett. 96, 093101 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (266 kB)  ]    Order
	A compact, transportable, microchip-based system for high repetition rate production of Bose–Einstein condensates Daniel M. Farkas, Kai M. Hudek, Evan A. Salim, Stephen R. Segal, Matthew B. Squires, and Dana Z. Anderson Appl. Phys. Lett. 96, 093102 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (390 kB)  ]    Order
	Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films Monalisa Mazumder, Theodorian Borca-Tasciuc, Sean C. Teehan, Emilio Stinzianni, Harry Efstathiadis, and Slowa Solovyov Appl. Phys. Lett. 96, 093103 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (248 kB)  ]    Order
	Optically and thermally manipulated spin transport through a quantum dot Yibo Ying and Guojun Jin Appl. Phys. Lett. 96, 093104 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (201 kB)  ]    Order
	Frequency analysis of nanotubes with consideration of surface effects Behrooz Farshi, Abbas Assadi, and Ali Alinia-ziazi Appl. Phys. Lett. 96, 093105 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (219 kB)  ]    Order
	Electron-induced adhesion and patterning of gold nanoparticles I. Torchinsky, N. Amdursky, A. Inberg, and G. Rosenman Appl. Phys. Lett. 96, 093106 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (295 kB)  ]    Order
	Electrical bistability and negative differential resistance in single Sb-doped ZnO nanobelts/SiOx/p-Si heterostructured devices Ya Yang, Junjie Qi, Wen Guo, Zi Qin, and Yue Zhang Appl. Phys. Lett. 96, 093107 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (406 kB)  ]    Order
	Current-induced phase transition in ballistic Ni nanocontacts R. G. Gatiyatov, V. N. Lisin, and A. A. Bukharaev Appl. Phys. Lett. 96, 093108 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (100 kB)  ]    Order
	Multiferroic GaN nanofilms grown within Na-4 mica channels Santanu Bhattacharya, A. Datta, and D. Chakravorty Appl. Phys. Lett. 96, 093109 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (274 kB)  ]    Order
	Compensation between magnetoresistance and switching current in Co/Cu/Co spin valve pillar structure K. W. Cheng, C. Yu, L. K. Lin, Y. D. Yao, Y. Liou, J. H. Huang, and S. F. Lee Appl. Phys. Lett. 96, 093110 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (254 kB)  ]    Order
	A level set based approach for modeling oxidation processes of ligand stabilized metallic nanoparticles A. Auge, A. Weddemann, B. Vogel, F. Wittbracht, and A. Hütten Appl. Phys. Lett. 96, 093111 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (133 kB)  ]    Order
	Single-photon emission from InGaAs quantum dots grown on (111) GaAs Erik Stock, Till Warming, Irina Ostapenko, Sven Rodt, Andrei Schliwa, Jan Amaru Töfflinger, Anatol Lochmann, Aleksandr I. Toropov, Sergej A. Moshchenko, Dimitry V. Dmitriev, Vladimir A. Haisler, and Dieter Bimberg Appl. Phys. Lett. 96, 093112 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (170 kB)  ]    Order
	Heterotwin formation during growth of nanolayered Al-TiN composites Dhriti Bhattacharyya, Xiang-Yang Liu, Arda Genc, Hamish L. Fraser, Richard G. Hoagland, and Amit Misra Appl. Phys. Lett. 96, 093113 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (332 kB)  ]    Order
	Engineering directed excitonic energy transfer Alejandro Perdomo, Leslie Vogt, Ali Najmaie, and Alan Aspuru-Guzik Appl. Phys. Lett. 96, 093114 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (229 kB)  ]    Order
	Nucleation and growth of nickel nanoclusters on graphene Moiré on Rh(111) M. Sicot, S. Bouvron, O. Zander, U. Rüdiger, Yu. S. Dedkov, and M. Fonin Appl. Phys. Lett. 96, 093115 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (351 kB)  ]    Order
	As doping of Si-based low-dimensional systems F. Ruffino, M. V. Tomasello, M. Miritello, G. Nicotra, C. Spinella, and M. G. Grimaldi Appl. Phys. Lett. 96, 093116 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (270 kB)  ]    Order
	Solution-processed bulk heterojunction photovoltaic devices based on poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene-multiwalled carbon nanotubes/PbSe quantum dots bilayer Yiyu Feng, Daqin Yun, Xuequan Zhang, and Wei Feng Appl. Phys. Lett. 96, 093301 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (294 kB)  ]
	High response deep ultraviolet organic photodetector with spectrum peak focused on 280 nm Shuang-hong Wu, Wen-lian Li, Bei Chu, C. S. Lee, Zi-sheng Su, Jun-bo Wang, Fei Yan, Guang Zhang, Zhi-zhi Hu, and Zhi-qiang Zhang Appl. Phys. Lett. 96, 093302 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (254 kB)  ]
	Band gap states of copper phthalocyanine thin films induced by nitrogen exposure Tomoki Sueyoshi, Haruya Kakuta, Masaki Ono, Kazuyuki Sakamoto, Satoshi Kera, and Nobuo Ueno Appl. Phys. Lett. 96, 093303 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (665 kB)  ]
	Influence of the hole blocking layer on blue phosphorescent organic light-emitting devices using 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole as host material Nico Seidler, Sebastian Reineke, Karsten Walzer, Björn Lüssem, Ausra Tomkeviciene, Juozas V. Grazulevicius, and Karl Leo Appl. Phys. Lett. 96, 093304 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (243 kB)  ]
	The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors E. R. Hsieh and Steve S. Chung Appl. Phys. Lett. 96, 093501 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (368 kB)  ]    Order
	Low-loss superconducting resonant circuits using vacuum-gap-based microwave components Katarina Cicak, Dale Li, Joshua A. Strong, Michael S. Allman, Fabio Altomare, Adam J. Sirois, Jed D. Whittaker, John D. Teufel, and Raymond W. Simmonds Appl. Phys. Lett. 96, 093502 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (391 kB)  ]    Order
	Investigating addition effect of hafnium in InZnO thin film transistors using a solution process Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Byung Du Ahn, Hyun Jae Kim, Myung-Kwan Ryu, Kyung-Bae Park, Jong-Baek Seon, and Sang Yoon Lee Appl. Phys. Lett. 96, 093503 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (309 kB)  ]    Order
	Capacitive-type counter of nanoparticles in air I. Iskra, A. Detela, M. Viršek, V. Nemanič, D. Križaj, D. Golob, J. T. van Elteren, and M. Remškar Appl. Phys. Lett. 96, 093504 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (289 kB)  ]    Order
	Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon T. Schutz-Kuchly, J. Veirman, S. Dubois, and D. R. Heslinga Appl. Phys. Lett. 96, 093505 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (238 kB)  ]    Order
	Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications Hee-Wook You and Won-Ju Cho Appl. Phys. Lett. 96, 093506 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (371 kB)  ]    Order
	Four probe architecture using high spatial resolution single multi-walled carbon nanotube electrodes for electrophysiology and bioimpedance monitoring of whole tissue Edward D. de Asis, Jr., Joseph Leung, Sally Wood, and Cattien V. Nguyen Appl. Phys. Lett. 96, 093701 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (341 kB)  ]    Order
	Superhydrophilic TiO2 surface without photocatalytic activation Vassilia Zorba, Xiaobo Chen, and Samuel S. Mao Appl. Phys. Lett. 96, 093702 (2010) (3 pages) Abstract   Full Text: [ Read Online (HTML) PDF  (351 kB)  ]    Order
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News & Announcements from APL and JAP Dear Colleague, The Editors, review committee members, and publisher (American Institute of Physics), wish to express our sincere thanks for your comments over the past few months. We were overwhelmed by the number and positivity of your responses to our request for feedback and regret that we can't thank each of you individually. Those of you who sent more critical remarks can rest assured that they were considered by the committee members, who have now made recommendations to the Editors and Publisher for improvements to the journals that are intended to ensure they will continue to serve as a valuable communication channel within the research community. We look forward to updating you on enhancements to the journals as a result of the committee's recommendations, and your feedback, in the coming months. In the meantime, we've included below a selection of interesting things happening in the journals right now! Your feedback is, of course, welcome at any time. We look forward to hearing from you and perhaps speaking with you at the Meet the Editors Reception at the APS March Meeting in Portland. Regards, Nghi Lam, Editor, Applied Physics Letters P. James Viccaro, Editor, Journal of Applied Physics Jacek K. Furdyna, Review Committee Chair, Applied Physics Letters Jerry Meyer, Review Committee Chair, Journal of Applied Physics Research Highlights Parasitic capacitance effect on programming performance of phase change random access memory devices E. G. Yeo, L. P. Shi, R. Zhao, K. G. Lim, T. C. Chong, and I. Adesida Phase change random access memory devices with larger parasitic capacitance were found to require higher applied voltage to amorphize due to a larger leakage current. The quenching time is also increased due to a longer voltage fall time during amorphization, resulting in a partially crystallized amorphous state. Appl. Phys. Lett. 96, 043506 (2010) Magnetic properties of graded A1/L10 films obtained by heat treatment of FePt/CoPt multilayers V. Alexandrakis, D. Niarchos, K. Mergia, Jehyun Lee, J. Fidler, and I. Panagiotopoulos The magnetic properties can be tuned by adjustment of the layer thicknesses and taking advantage of the different heat-treatment temperatures required for the ordering of the L10 phase between FePt and CoPt. J. Appl. Phys. 107, 013903 (2010) On the shock response of cubic metals N. K. Bourne, G. T. Gray, III, and J. C. F. Millett The response of four cubic metals to shock loading is reviewed in order to understand the effects of microstructure on continuum response. A comparison of the behavior of these four materials illustrates the role of defect generation, transport, storage, and interaction in determining the response of materials to shock prestraining. J. Appl. Phys. 106, 091301 (2009) iResearch - a reader for your iPhone® or iPod Touch® iResearch is an e-reader that enables you to save AIP journal article PDF files locally to your device and view them offline later without a Wi-Fi or cellular connection. Navigate through the journals, volumes and issues to select an article. You will automatically be logged in with your institutional IP Address if you are online within a qualifying address range, or you can enter your username/password to obtain access. Read more and find out how to download the app. AIP UniPHY - A revolutionary new approach to networking and collaboration in the physical sciences Now there's a new tool that can help you communicate with colleagues and identify potential collaborators. AIP UniPHY is a first-of-its-kind professional social networking platform for physical scientists that is pre-populated with profiles of individual scientists based on their publication history. AIP UniPHY enables you to connect with over 275,000 of your colleagues from more than 100 countries. You'll discover the research each of these individuals has conducted and follow a web of connections showing each co-author with whom the investigator has worked. AIP UniPHY reveals with whom each of these co-authors has collaborated, as well. Go to aipuniphy.org today to sign up and view your pre-populated profile. Top 20 Most Downloaded Articles View the 20 most downloaded articles of the month in APL and JAP. Follow @AIP_Publishing on twitter Submit your manuscript:     · APL     · JAP Information for Contributors:     · APL     · JAP

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ScienceDirect Alert: Solid-State Electronics, Vol. 54, Iss. 4, 2010

New Volume/Issue is now available on ScienceDirect

Solid-State Electronics Volume 54, Issue 4,  Pages 343-504 (April 2010)

1.

Editorial Board Page IFC

Regular Papers

2.

A concisely asymmetric modeling of double-π equivalent circuit for on-chip spiral inductors Pages 343-348 Li Yu, Yang Tang, Yan Wang

3.

Electroplex emission of the blend film of PVK and DPVBi Pages 349-352 Junming Li, Zheng Xu, Fujun Zhang, Suling Zhao, Dandan Song, Haina Zhu, Jinglu Song, Yongsheng Wang, Xurong Xu

4.

Microwave power and simulation of S-band SiC MESFETs Pages 353-356 Chen Gang, Qin YuFei, Bai Song, Wu Peng, Li ZheYang, Chen Zheng, P. Han

5.

ESD performance of 65 nm partially depleted n and p channel SOI MOSFETs Pages 357-361 R. Mishra, D.E. Ioannou, S. Mitra, R. Gauthier, C. Seguin, R. Halbach

6.

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET) Pages 362-367 Heung-Jae Cho, Sanghoon Lee, Byung-Gook Park, Hyungcheol Shin

7.

A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology Pages 368-377 Wu-Te Weng, Yao-Jen Lee, Horng-Chih Lin, Tiao-Yuan Huang

8.

Thermal and spectral analysis of self-heating effects in high-power LEDs Pages 378-381 Nicholas M. Rada, Gregory E. Triplett

9.

Solution space for the independent-gate asymmetric DGFET Pages 382-384 Gajanan Dessai, Gennady Gildenblat

10.

Robustness of SuperJunction structures against cosmic ray induced breakdown Pages 385-391 Marina Antoniou, Florin Udrea, Friedhelm Bauer

11.

Highly durable and flexible memory based on resistance switching Pages 392-396 Sungho Kim, Oktay Yarimaga, Sung-Jin Choi, Yang-Kyu Choi

12.

A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells Pages 397-404 A. Datta, S. Mahapatra

13.

Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Pages 405-409 Kyu-Heon Cho, Young-Shil Kim, Jiyong Lim, Young-Hwan Choi, Min-Koo Han

14.

A flash analog to digital converter on stainless steel foil substrate Pages 410-416 Abbas Jamshidi-Roudbari, Po-Chin Kuo, Miltiadis K. Hatalis

15.

SixGey:H-based micro-bolometers studied in the terahertz frequency range Pages 417-419 A. Kosarev, S. Rumyantsev, M. Moreno, A. Torres, S. Boubanga, W. Knap

16.

Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers Pages 420-426 Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi

17.

Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors Pages 427-432 Richard K. Oxland, Gary W. Paterson, Andrew R. Long, Faiz Rahman

18.

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes Pages 433-438 Monuko du Plessis, Pieter Rademeyer

19.

Storage stability improvement of pentacene thin-film transistors using polyimide passivation layer fabricated by vapor deposition polymerization Pages 439-442 Gun Woo Hyung, Jaehoon Park, Jun Ho Kim, Ja Ryong Koo, Young Kwan Kim

20.

Novel phase-change material GeSbSe for application of three-level phase-change random access memory Pages 443-446 Yifeng Gu, Zhitang Song, Ting Zhang, Bo Liu, Songlin Feng

21.

Nanostructured morphology of P3HT:PCBM bulk heterojunction solar cells Pages 447-451 Golap Kalita, Matsushima Masahiro, Wakita Koichi, Masayoshi Umeno

22.

The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time Pages 452-456 Yue Zhao, Zhiyong Lv, Zhao Li, Xiaoyan Liang, Jiahua Min, Linjun Wang, Weimin Shi, Yongyue Liu

23.

A C-band GaN based linear power amplifier with 55.7% PAE Pages 457-460 Weijun Luo, Xiaojuan Chen, Hui Zhang, Guoguo Liu, Yingkui Zheng, Xinyu Liu

24.

Effects of switching from ⟨1 1 0⟩ to ⟨1 0 0⟩ channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors Pages 461-474 Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. Chan

25.

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors Pages 475-478 H.-K. Lin, Y.-C. Lin, F.-H. Huang, T.-W. Fan, P.-C. Chiu, J.-I. Chyi, C.-H. Ko, T.-M. Kuan, M.-K. Hsieh, W.-C. Lee, C.H. Wann

26.

Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers Pages 479-483 Hai Zhong Zhang, Hong Tao Cao, Ai Hua Chen, Ling Yan Liang, Zhi Min Liu, Qing Wan

27.

Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures Pages 484-487 Kyung-Min Yoon, Ki-Yeon Yang, Kyeong-Jae Byeon, Heon Lee

28.

AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact Pages 488-491 Han Cheng Lee, Yan Kuin Su, Jia Ching Lin, Yi Cheng Cheng, Ta Ching Li, Kuo Jen Chang

29.

1.3 μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs Pages 492-496 M. Montes, A. Guzmán, A. Trampert, A. Hierro

30.

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements Pages 497-503 Seungyeon Lee, Hyunjoo Lee, Sojeong Kim, Seungjun Lee, Hyungsoon Shin

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