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| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | A concisely asymmetric modeling of double-π equivalent circuit for on-chip spiral inductors Pages 343-348 Li Yu, Yang Tang, Yan Wang |
| 3. | Electroplex emission of the blend film of PVK and DPVBi Pages 349-352 Junming Li, Zheng Xu, Fujun Zhang, Suling Zhao, Dandan Song, Haina Zhu, Jinglu Song, Yongsheng Wang, Xurong Xu |
| 4. | Microwave power and simulation of S-band SiC MESFETs Pages 353-356 Chen Gang, Qin YuFei, Bai Song, Wu Peng, Li ZheYang, Chen Zheng, P. Han |
| 5. | ESD performance of 65 nm partially depleted n and p channel SOI MOSFETs Pages 357-361 R. Mishra, D.E. Ioannou, S. Mitra, R. Gauthier, C. Seguin, R. Halbach |
| 6. | Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET) Pages 362-367 Heung-Jae Cho, Sanghoon Lee, Byung-Gook Park, Hyungcheol Shin |
| 7. | A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology Pages 368-377 Wu-Te Weng, Yao-Jen Lee, Horng-Chih Lin, Tiao-Yuan Huang |
| 8. | Thermal and spectral analysis of self-heating effects in high-power LEDs Pages 378-381 Nicholas M. Rada, Gregory E. Triplett |
| 9. | Solution space for the independent-gate asymmetric DGFET Pages 382-384 Gajanan Dessai, Gennady Gildenblat |
| 10. | Robustness of SuperJunction structures against cosmic ray induced breakdown Pages 385-391 Marina Antoniou, Florin Udrea, Friedhelm Bauer |
| 11. | Highly durable and flexible memory based on resistance switching Pages 392-396 Sungho Kim, Oktay Yarimaga, Sung-Jin Choi, Yang-Kyu Choi |
| 12. | A comprehensive analysis on scaling prospects of dual-bit channel engineered SONOS NOR-flash EEPROM cells Pages 397-404 A. Datta, S. Mahapatra |
| 13. | Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Pages 405-409 Kyu-Heon Cho, Young-Shil Kim, Jiyong Lim, Young-Hwan Choi, Min-Koo Han |
| 14. | A flash analog to digital converter on stainless steel foil substrate Pages 410-416 Abbas Jamshidi-Roudbari, Po-Chin Kuo, Miltiadis K. Hatalis |
| 15. | SixGey:H-based micro-bolometers studied in the terahertz frequency range Pages 417-419 A. Kosarev, S. Rumyantsev, M. Moreno, A. Torres, S. Boubanga, W. Knap |
| 16. | Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers Pages 420-426 Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi |
| 17. | Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors Pages 427-432 Richard K. Oxland, Gary W. Paterson, Andrew R. Long, Faiz Rahman |
| 18. | Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes Pages 433-438 Monuko du Plessis, Pieter Rademeyer |
| 19. | Storage stability improvement of pentacene thin-film transistors using polyimide passivation layer fabricated by vapor deposition polymerization Pages 439-442 Gun Woo Hyung, Jaehoon Park, Jun Ho Kim, Ja Ryong Koo, Young Kwan Kim |
| 20. | Novel phase-change material GeSbSe for application of three-level phase-change random access memory Pages 443-446 Yifeng Gu, Zhitang Song, Ting Zhang, Bo Liu, Songlin Feng |
| 21. | Nanostructured morphology of P3HT:PCBM bulk heterojunction solar cells Pages 447-451 Golap Kalita, Matsushima Masahiro, Wakita Koichi, Masayoshi Umeno |
| 22. | The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time Pages 452-456 Yue Zhao, Zhiyong Lv, Zhao Li, Xiaoyan Liang, Jiahua Min, Linjun Wang, Weimin Shi, Yongyue Liu |
| 23. | A C-band GaN based linear power amplifier with 55.7% PAE Pages 457-460 Weijun Luo, Xiaojuan Chen, Hui Zhang, Guoguo Liu, Yingkui Zheng, Xinyu Liu |
| 24. | Effects of switching from ⟨1 1 0⟩ to ⟨1 0 0⟩ channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors Pages 461-474 Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. Chan |
| 25. | Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors Pages 475-478 H.-K. Lin, Y.-C. Lin, F.-H. Huang, T.-W. Fan, P.-C. Chiu, J.-I. Chyi, C.-H. Ko, T.-M. Kuan, M.-K. Hsieh, W.-C. Lee, C.H. Wann |
| 26. | Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers Pages 479-483 Hai Zhong Zhang, Hong Tao Cao, Ai Hua Chen, Ling Yan Liang, Zhi Min Liu, Qing Wan |
| 27. | Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures Pages 484-487 Kyung-Min Yoon, Ki-Yeon Yang, Kyeong-Jae Byeon, Heon Lee |
| 28. | AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact Pages 488-491 Han Cheng Lee, Yan Kuin Su, Jia Ching Lin, Yi Cheng Cheng, Ta Ching Li, Kuo Jen Chang |
| 29. | 1.3 μm emitting GaInNAs/GaAs quantum well resonant cavity LEDs Pages 492-496 M. Montes, A. Guzmán, A. Trampert, A. Hierro |
| 30. | A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements Pages 497-503 Seungyeon Lee, Hyunjoo Lee, Sojeong Kim, Seungjun Lee, Hyungsoon Shin |
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