Research Highlights and News from Applied Physics Letters

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News & Announcements from Applied Physics Letters iPeerReview – AIP's New iOS App Whether you're in your office, in the library, or just sipping coffee at Starbucks®, you can check the status of your AIP journal article with our new iPeerReview app. iPeerReview lets AIP authors and reviewers use their iPhone®, iPad®, or iPod touch® to access information about papers they've submitted to our Peer-X-Press online submission and review site and perform a number of activities related to those papers. To download iPeerReview, simply visit the iTunes® store. For more information about iPeerReview, go to http://labs.aip.org/. Top Downloads View the 20 most downloaded articles published in Applied Physics Letters, updated monthly. Image from Single-electron shuttle based on a silicon quantum dot K. W. Chan, M. Möttönen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, and A. S. Dzurak Appl. Phys. Lett. 98, 212103 (2011) Research Highlights Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Yan Cheng, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, Songlin Feng, and Bomy Chen The phase change memory with monolayer chalcogenide film (Si18Sb52Te30) is investigated for the feasibility of multilevel data storage. During the annealing of the film, a relatively stable intermediate resistance can be obtained at an appropriate heating rate. The transmission electron microscopy in situ analysis reveals a conversion of crystallization mechanism from nucleation to crystal growth, which leads a continuous reduction in the degree of disorder. It is indicated from the electrical properties of the devices that the fall edge of the voltage pulse is the critical factor that determines a reliable triple-level resistance state of the phase change memory cell. Appl. Phys. Lett. 99, 032105 (2011) Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system Kun-Rok Jeon, Byoung-Chul Min, Il-Jae Shin, Chang-Yup Park, Hun-Sung Lee, Young-Hun Jo, and Sung-Chul Shin Here the achievement of electrical spin accumulation in n-type Si using a crystalline CoFe/MgO tunnel contact is reported. The spin signal and lifetime obtained in this system show consistent behavior with the temperature variation irrespective of the bias voltage. Notably, the spin signal exhibits nearly symmetric dependence with respect to the bias polarity. Appl. Phys. Lett. 98, 262102 (2011) Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments Gun Hwan Kim, Jong Ho Lee, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Kyung Min Kim, Hyung Dong Lee, Seung Wook Ryu, Tae Joo Park, and Cheol Seong Hwang A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy. Appl. Phys. Lett. 98, 262901 (2011) More Research Highlights Did You Know…? Supplementary data, images or other information can be submitted alongside your manuscript.  For more information, visit the Supplemental Material homepage. Stay In Touch Timely updates about Applied Physics Letters are available on these social networks:   Subscribe to the Table of Contents alerts or the RSS feed to receive the latest research as it is published. Submit your manuscript Information for Contributors
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