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| 1. | Editorial Board Page IFC |
| Review |
| 2. | Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noise Review Article Pages 1-7 M. Trabelsi, L. Militaru, N. Sghaier, A. Souifi, N. Yacoubi Research highlights► RTS analysis allows the determination of single trap energy level and localization. ► For 0.8 nm gate oxide thick, transport is governed by nc-Si and interface traps. ► RTS noise is the basic feature responsible for l/fγ noise in large area devices. |
| Regular Papers |
| 3. | Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure Original Research Article Pages 8-12 Li-Chuan Chang, Cheng-Huang Kuo, Chi-Wen Kuo |
| 4. | Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device Original Research Article Pages 13-17 Daolin Cai, Zhitang Song, Houpeng Chen, Xiaogang Chen Research highlights► Temperature model is constituted by an active region and a dispersed-heat region. ► Calculated and simulated the radius and crystalline fraction. ► Crystalline fraction and temperature increase with the reset voltage increasing. |
| 5. | Microwave noise modeling of FinFETs Original Research Article Pages 18-22 Giovanni Crupi, Alina Caddemi, Dominique M.M.-P. Schreurs, Wojciech Wiatr, Abdelkarim Mercha |
| 6. | Comprehensive numerical simulation of threshold-voltage transients in nitride memories Original Research Article Pages 23-30 Aurelio Mauri, Salvatore M. Amoroso, Christian Monzio Compagnoni, Alessandro Maconi, Alessandro S. Spinelli Research highlights► We present a complete model to describe charge trap devices behavior. ► In this study any mathematical aspect regarding holes and electrons is detailed modeled. ► Experimental data coming from different TANOS and SONOS devices are correctly reproduced. |
| 7. | Investigation of GaN-based light-emitting diodes using double photonic crystal patterns Original Research Article Pages 31-34 H.W. Huang, Fang-I Lai, S.Y. Kuo, J.K. Huang, K.Y. Lee |
| 8. | On relationship between the field at an autoemitter top, anode voltage and cathode geometry Original Research Article Pages 35-39 B.V. Stetsenko, A.I. Shchurenko Research highlights► At a cathode size lowring an emission current become less of Fowler-Nordheim it. ► A field emission is appear when a voltage along cathode is large work function. ► Under the action of contact potetial a nanocathode field emission are observed. |
| 9. | A unified short-channel compact model for cylindrical surrounding-gate MOSFET Original Research Article Pages 40-46 Bastien Cousin, Marina Reyboz, Olivier Rozeau, Marie-Anne Jaud, Thomas Ernst, Jalal Jomaah Research highlights► A compact model of short-channel effects for GAA MOSFET has been developed. ► The model uses a well-known extraction method making the model simple and accurate. ► Each term is used in a model core in order to provide a short-channel correction. ► The compact model is well described and is suitable with circuit design tools. ► The model is validated using TCAD simulations for all gate lengths down to 10nm. |
| 10. | Optimization of SiGe bandgap-based circuits for up to 300 °C operation Original Research Article Pages 47-55 D.B. Thomas, L. Najafizadeh, J.D. Cressler, K.A. Moen, N. Lourenco Research Highlights► Devices in commercial bulk SiGe BiCMOS platform characterized to demonstrate acceptable performance up to 300 °C. ► Proven SiGe BGR circuit designed for wide temperature operation verified to work up to 300 °C. ► High temperature device and circuit level compensation techniques shown to significantly improve SiGe BGR performance from −225 °C to 300 °C. ► Non-optimized SiGe temperature sensor circuit shown to compare favorably with commercially available temp sensors up to 225 °C. |
| 11. | Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors Original Research Article Pages 56-59 Martin Kocan, Felix Recht, Gilberto A. Umana-Membreno, Matt R. Kilburn, Brett D. Nener, Umesh K. Mishra, Giacinta Parish |
| 12. | Physical limitations of the diffusive approximation in semiconductor device modeling Original Research Article Pages 60-67 Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov Research highlights► New criteria for occurrence of the diffusion mode were formulated. ► The applicability limits of the diffusion approximation in simulation were found. ► The analytical results are confirmed by a numerical experiment. |
| 13. | Effects of 72Ge/74Ge preamorphization combined with sub-keV boron implantation in pMOSFET fabrication Original Research Article Pages 68-72 Lu-Chang Chen, Shang-Fu Chen, Meng-Chyi Wu Research highlights► We demonstrate the thickness by controlling a high 72Ge/74Ge ratio, the device performance can be enhanced. ► The optimum conditions of Ge PAI would help the confinement of boron ions to avoid the channel effect. ► a low 72Ge/74Ge ratio would cause the degradation of Vth roll-off and Ion/Ioff ratio. ► We examine a thinner Ge amorphous layer has a weak ability to suppress the channeling tail of boron. |
| 14. | Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates Original Research Article Pages 73-78 Yuki Niiyama, Zhongda Li, T. Paul Chow, Jiang Li, Takehiko Nomura, Sadahiro Kato |
| 15. | Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses Original Research Article Pages 79-84 H.K. Lee, D.H. Lee, Y.M. Song, Y.T. Lee, J.S. Yu |
| 16. | A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs Original Research Article Pages 85-88 Hsien-Cheng Tseng, Jhin-Yuan Chen Research highlights► InGaP/GaAs collector-up HBTs with a heat-dissipation packaging configuration is developed. ► The thermal handling in the device has been optimized through the variation of finger pitches. ► Structure thickness was reduced more than 35%, and the thermal resistance was improved over 40%. |
| 17. | Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve Original Research Article Pages 89-94 Ana Isabela Araújo Cunha, Marcelo Antonio Pavanello, Renan Doria Trevisoli, Carlos Galup-Montoro, Marcio Cherem Schneider |
| 18. | Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors Original Research Article Pages 95-99 Sangwon Lee, Yong Woo Jeon, Sungchul Kim, Dongsik Kong, Dae Hwan Kim, Dong Myong Kim |
| 19. | Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes Original Research Article Pages 100-103 Gowrish K. Rao, Kasturi V. Bangera, G.K. Shivakumar Research highlights► We have fabricated p-ZnTe/n-CdTe heterojunction diode by vacuum deposition. ► We have determined the dominant conduction mechanisms in the heterojunction. ► Barrier height, width of the depletion region have been determined. ► A band diagram of the heterojunction has been drawn based on Anderson’s Model. |
| 20. | Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of ⟨1 1 1⟩ and ⟨1 0 0⟩ crystal orientation at high electric fields Original Research Article Pages 104-110 Julian Becker, Eckhart Fretwurst, Robert Klanner |
| 21. | Channel scaling of hybrid GaN MOS-HEMTs Original Research Article Pages 111-115 Zhongda Li, T. Paul Chow Research highlights► We studied the effect of downscaling of the MOS channel of hybrid GaN MOS-HEMT. ► Numerical simulations were used in this study. ► The improvement in on-state conduction were quantified. ► A Ron,sp of 2.1 mΩ-cm2 was projected for MOS channel of 0.38 μm. ► We also found that GaN cap layer reduced short channel effects. |
| 22. | Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors Original Research Article Pages 116-119 J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González, S. Perez Research highlights► Detection and generation in the TeraHertz range. ► Dispersion of plasma oscillations in nanometric MESFETs. ► Plasmonic noise of a two dimensional electron gas. ► The role of the gate in the control of the spectrum of 2D plasma oscillations. |
| 23. | Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations Original Research Article Pages 120-129 Vikas Kaushal, Ignacio Iñiguez-de-la-Torre, Martin Margala Research highlights► BDT is a novel device that is based upon an electron steering and a deflection effect. ► The BDT has a unique planar device capable to perform logic operations. ► The low gate capacitance should allow THz performance. ► BDT possesses both the positive and negative transconductance region. ► Ideal for frequency doubling at very high speeds. |
| 24. | Electrical characteristics of nickel silicide–silicon heterojunction in suspended silicon nanowires Original Research Article Pages 130-134 Su Heon Hong, Myung Gil Kang, Byung-Sung Kim, Duk Soo Kim, Jae Hyun Ahn, Dongmok Whang, Sang Hoon Sull, Sung Woo Hwang Research highlights► Step-by-step silicidation of silicon nanowire. ► The penetration depth is proportional to the total annealing time. ► The current–voltage characteristics are modeled by back-to-back Schottky diodes. |
| 25. | Dynamic model of AlGaN/GaN HFET for high voltage switching Original Research Article Pages 135-140 Alexei Koudymov |
| 26. | A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates Original Research Article Pages 141-147 Md. Mahbub Satter, Ahmad Ehteshamul Islam, Dhanoop Varghese, Muhammad Ashraful Alam, Anisul Haque |
| 27. | A surface potential based drain current model for asymmetric double gate MOSFETs Original Research Article Pages 148-154 Pradipta Dutta, Binit Syamal, N. Mohankumar, C.K. Sarkar Research highlights► We model a surface potential based drain current for asymmetric DG MOSFETs. ► The model is applicable for both heavily and lightly doped Silicon channel. ► The surface potential at both the gates are solved using proper Iterative techniques. ► The effect of volume inversion is shown in case of lightly doped channel. |
| 28. | Improved performance of mixed single layer top-emission organic light emitting devices using capping layer Original Research Article Pages 155-158 Zhaokui Wang, Shigeki Naka, Hiroyuki Okada Research highlights► Effects of capping layer on a mixed single layer Top-emission OLED were investigated. ► 2.5 time enhancement was obtained when 45 nm TPD films used as capping layer. ► Performance enhancement was explained through measuring device properties. ► It was attributed to special mixed single layer structure with complex interference. |
| 29. | In-cell adaptive touch technology for a flexible e-paper display Original Research Article Pages 159-162 Jong-Kwon Lee, Sang-Soo Kim, Yong-In Park, Chang-Dong Kim, Yong-Kee Hwang Research highlights► Development of in-cell adaptive touch technology for microcapsule-type flexible electrophoretic display for the first time. ► The use of newly designed two types of a-Si:H photo-sensor arrays with different channel W/L on a stainless steel substrate to get better touch sensitivity depending upon the environmental light intensities. ► The use of the overall capacitive sensor to get rid of the inherent issue of photo-sensor related to shadow effects. ► Development of the hybrid-touch structure consisting of the overall capacitor as a switch and the two types of photo-sensor arrays for touch position, which can reduce power consumption effectively without decreasing image quality while maintaining slim, light-weight, and compact module architecture. |
| 30. | High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique Original Research Article Pages 163-167 Hiroshi Kambayashi, Yoshihiro Satoh, Takuya Kokawa, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato |
| 31. | Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer Original Research Article Pages 168-174 Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, Ch. Turquat, S. Spiga |
| 32. | Effects of residual copper selenide on CuInGaSe2 solar cells Original Research Article Pages 175-178 Tung-Po Hsieh, Chia-Chih Chuang, Chung-Shin Wu, Jen-Chuan Chang, Jhe-Wei Guo, Wei-Chien Chen Research highlights► The conductive Cu2-xSe becomes the shunt paths, especially for a high Cu content. ► The residual Cu2-xSe on CIGS destroys the pn junction behavior. ► The Cu-rich CIGS cells treated by KCN cannot show acceptable efficiency. ► Exhausting the residual Cu2–xSe is necessary for high-efficiency CIGS solar cells. |
| 33. | Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications Original Research Article Pages 179-184 M. Ullán, S. Díez, M. Lozano, G. Pellegrini, D. Knoll, B. Heinemann Research highlights► We study advanced SiGe bipolar devices irradiated in different bias configurations. ► Less damage seen with gammas in biased devices than in shorted or floating ones. ► Annealing differences are not enough to compensate the bias damage differences. ► Floating configuration should be avoided in gamma irradiations. ► Bias effects have not been observed in neutron irradiations. |
| 34. | Titanium and silver contacts on thermally oxidized titanium chip: Electrical and gas sensing properties Original Research Article Pages 185-190 F. Hossein-Babaei, S. Rahbarpour Research highlights► Ti–TiO2 contact is ohmic in all atmospheric conditions and temperatures. ► Ohmic Ag–TiO2 contact becomes highly nonlinear in oxidizing atmosphere. ► Forward biased Ag–TiO2 was experimentally analyzed to result barrier height. ► Reverse current in Ag–TiO2–Ti diode increases 105 times in reducing atmospheres. |
| 35. | SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer Original Research Article Pages 191-195 L.W. Qu, X.S. Miao, J.J. Sheng, Z. Li, J.J. Sun, P. An, Jiandong Huang, Daohong Yang, Chang Liu |
| 36. | Transient electroluminescence determination of carrier mobility and charge trapping effects in heavily doped phosphorescent organic light-emitting diodes Original Research Article Pages 196-200 Ming-Te Lin, Minghang Li, Wei-Hsuan Chen, Mohammad A. Omary, Nigel D. Shepherd |
| 37. | AlGaN/GaN hybrid MOS-HEMT analytical mobility model Original Research Article Pages 201-206 A. Pérez-Tomás, A. Fontserè Research highlights► The hybrid normally-off switch AlGaN/GaN MOS-HEMT combines two main advantages: ► The MOS gate control and the high 2DEG mobility in AlGaN/GaN drift region. ► Here, we present simple analytical modeling of the on-resistance of a hybrid MOS-HEMT. ► We investigate the layout, the MOS channel mobility, the effect of a high-k and the temperature. ► The model can aid to understand the device physics and is compatible with TCAD simulation packages. |
| Short Communications |
| 38. | Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation Pages 207-210 Tomohiro Kasakawa, Hiroki Tabata, Ryo Onodera, Hiroki Kojima, Mutsumi Kimura, Hiroyuki Hara, Satoshi Inoue Graphical abstractResearch highlights► We evaluate degradation of poly-Si TFTs by comparing normal and reverse characteristics. ► Symmetrical normal and reverse characteristics indicate Joule-heating degradation. ► Asymmetrical characteristics indicate hot-carrier degradation. ► Degradation occurrence is contrasted between standard and fine TFTs. ► Behavior of the hot-carrier degradation is analyzed. |
| 39. | A mechanism for asymmetric data writing failure Pages 211-213 Myoung Jin Lee, Kun Woo Park |
| 40. | Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction Pages 214-218 J.C. Tinoco, A.G. Martinez-Lopez, J.-P. Raskin |
| 41. | Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes Pages 219-222 Eun-Ae Chung, Young-Pil Kim, Kab-Jin Nam, Sungsam Lee, Ji-Young Min, Yu-Gyun Shin, Siyoung Choi, Gyoyoung Jin, Joo-Tae Moon, Sangsig Kim |
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