Piezoresponse force microscopy investigations of Aurivillius phase thin films
Lynette Keeney, Panfeng F. Zhang, Claudia Groh, Martyn E. Pemble, and Roger W. Whatmore
The electromechanical responses of the materials were investigated using piezoresponse force microscopy and the results are discussed in relation to the crystallinity of the films as measured by x-ray diffraction.
J. Appl. Phys. 108, 042004 (2010)
Lateral piezoelectric response across ferroelectric domain walls in thin films
J. Guyonnet, H. Béa, and P. Paruch
We attribute lateral piezoresponse at domain walls to their sideways motion (shear) under the applied electric field. From simple elastic considerations and the conservation of volume of the unit cell, we would expect a similar lateral signal more generally in other ferroelectric materials, and for all types of domain walls in which the out-of-plane component of the polarization is reversed through the domain wall.
J. Appl. Phys. 108, 042002 (2010)
Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate
T. L. Burnett, P. M. Weaver, J. F. Blackburn, M. Stewart, and M. G. Cain
We show how, by combining textural analysis, through electron backscattered diffraction, with piezoresponse force microscopy, quantitative measurements of the piezoelectric properties can be made at a scale of 25 nm, smaller than the domain size. The results offer insight into the science of domain engineering and provide a tool for the future development of new nanostructured ferroelectric materials for memory, nanoactuators, and sensors based on magnetoelectric multiferroics.
J. Appl. Phys. 108, 042001 (2010)
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