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| 1. | Editorial Board Page IFC |
| Review |
| 2. | Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs Pages 1239-1245 Gerard F. Santillan-Quiñonez, Victor Champac, Roberto S. Murphy |
| Regular Papers |
| 3. | Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction Pages 1246-1256 Marco A. Rodríguez, Abraham Claudio, Maria Cotorogea, Leobardo H. González, Jesús Aguayo |
| 4. | Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity Pages 1257-1262 Lingquan Wang, Peter M. Asbeck, Yuan Taur |
| 5. | Improving the cell characteristics using arch-active profile in NAND flash memory having 60 nm design-rule Pages 1263-1268 Daewoong Kang, Hyungcheol Shin |
| 6. | Solvent dependent behaviour of poly(9-vinylcarbazole)-based polymer light emitting diodes Pages 1269-1272 J.L. Alonso, J.C. Ferrer, A. Salinas-Castillo, R. Mallavia, S. Fernández de Ávila |
| 7. | Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Pages 1273-1277 C. Barrett, D. Lederer, G. Redmond, W. Xiong, J.P. Colinge, A.J. Quinn |
| 8. | On the possibility of improving silicon solar cell efficiency through impurity photovoltaic effect and compensation Pages 1278-1283 Akeed A. Pavel, M. Rezwan Khan, N.E. Islam |
| 9. | Impact of transparent conductive oxide on the admittance of thin film solar cells Pages 1284-1290 F. Principato, G. Cannella, S. Lombardo, M. Foti |
| 10. | Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Pages 1291-1294 N. Tripathi, V. Jindal, F. Shahedipour-Sandvik, S. Rajan, A. Vert |
| 11. | Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Pages 1295-1299 Bahniman Ghosh, Hai Liu, Brian Winstead, Mark C. Foisy, Sanjay K. Banerjee |
| 12. | A new analytical high frequency noise parameter model for AlGaN/GaN HEMT Pages 1300-1303 Xiaoxu Cheng, Yan Wang |
| 13. | Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation Pages 1304-1311 Peizhen Yang, W.S. Lau, Seow Wei Lai, V.L. Lo, S.Y. Siah, L. Chan |
| 14. | Accurate small signal modeling and extraction of silicon MOSFET for RF IC application Pages 1312-1318 Yang Tang, Li Zhang, Yan Wang |
| 15. | Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances Pages 1319-1325 C. Gerardi, E. Tripiciano, G. Cinà, S. Lombardo, C. Garozzo, D. Corso, G. Betrò, C. Pace, F. Crupi |
| 16. | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils Pages 1326-1331 Jaehyun Moon, Yong-Hae Kim, Dong-Jin Park, Choong-Heui Chung, Seung-Youl Kang, Jin-Ho Lee |
| 17. | A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Pages 1332-1338 Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer |
| 18. | High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator Pages 1339-1342 Zhihua Dong, Jinyan Wang, C.P. Wen, Danian Gong, Ying Li, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang |
| 19. | Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors Pages 1343-1348 R. Driad, R. Lösch, F. Benkhelifa, M. Kuri, J. Rosenzweig |
| 20. | Scaling projections for Sb-based p-channel FETs Pages 1349-1358 M.G. Ancona, B.R. Bennett, J.B. Boos |
| 21. | Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET Pages 1359-1366 Cecilia M. Mezzomo, Aurelie Bajolet, Augustin Cathignol, Emmanuel Josse, Gérard Ghibaudo |
| 22. | AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study Pages 1367-1371 Y. Hayashi, S. Sugiura, S. Kishimoto, T. Mizutani |
| 23. | 2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET Pages 1372-1380 Mike Schwarz, Michaela Weidemann, Alexander Kloes, Benjamín Iñíguez |
| 24. | Infrared light emitting device with two color emission Pages 1381-1383 Naresh C. Das |
| 25. | A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Pages 1384-1391 Moonju Cho, Robin Degraeve, Philippe Roussel, Bogdan Govoreanu, Ben Kaczer, Mohammed B. Zahid, Eddy Simoen, Antonio Arreghini, Malgorzata Jurczak, Jan Van Houdt, Guido Groeseneken |
| 26. | Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation Pages 1392-1397 Yudai Kamada, Shizuo Fujita, Takahiro Hiramatsu, Tokiyoshi Matsuda, Mamoru Furuta, Takashi Hirao |
| 27. | Impact of circuit assist methods on margin and performance in 6T SRAM Pages 1398-1407 Randy W. Mann, Jiajing Wang, Satyanand Nalam, Sudhanshu Khanna, Geordie Braceras, Harold Pilo, Benton H. Calhoun |
| 28. | Analytical current equation for short channel SOI multigate FETs including 3D effects Pages 1408-1415 Alexander Kloes, Michaela Weidemann, Mike Schwarz |
| 29. | The effect of photodiode shape on charge transfer in CMOS image sensors Pages 1416-1420 Bhumjae Shin, Sangsik Park, Hyuntaek Shin |
| 30. | Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET Pages 1421-1429 Sudipta Sarkar, Ananda S. Roy, Santanu Mahapatra |
| 31. | Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors Pages 1430-1433 S. Arulkumaran, G.I. Ng, C.H. Lee, Z.H. Liu, K. Radhakrishnan, N. Dharmarasu, Z. Sun |
| 32. | Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs Pages 1434-1437 O. Lancry, E. Pichonat, J. Réhault, M. Moreau, R. Aubry, C. Gaquière |
| 33. | Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED Pages 1438-1443 S.H. Tu, J.C. Chen, F.S. Hwu, G.J. Sheu, F.L. Lin, S.Y. Kuo, J.Y. Chang, C.C. Lee |
| 34. | Comparison and improvement of two core compact models for double-gate MOSFETs Pages 1444-1446 Xingye Zhou, Zhize Zhou, Jian Zhang, Lining Zhang, Chenyue Ma, Jin He, Xing Zhang |
| 35. | Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films Pages 1447-1450 J.P. Kar, S. Kim, B. Shin, K.I. Park, K.J. Ahn, W. Lee, J.H. Cho, J.M. Myoung |
| 36. | Analysis of transient behavior of AlGaN/GaN MOSHFET Pages 1451-1456 Y. Hayashi, S. Kishimoto, T. Mizutani |
| 37. | A new vertical MOSFET “Vertical Logic Circuit (VLC) MOSFET” suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit Pages 1457-1462 Koji Sakui, Tetsuo Endoh |
| 38. | An analytical model for square GAA MOSFETs including quantum effects Pages 1463-1469 E. Moreno, J.B. Roldán, F.G. Ruiz, D. Barrera, A. Godoy, F. Gámiz |
| 39. | Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Pages 1470-1473 D.F. Storm, D.S. Katzer, D.A. Deen, R. Bass, D.J. Meyer, J.A. Roussos, S.C. Binari, T. Paskova, E.A. Preble, K.R. Evans |
| 40. | Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks Pages 1474-1478 Chun-Chang Lu, Kuei-Shu Chang-Liao, Che-Hao Tsao, Tien-Ko Wang |
| 41. | Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes Pages 1479-1484 Albrecht Jander, Pallavi Dhagat |
| Short Communications |
| 42. | Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors Pages 1485-1487 M.C. Wang, S.W. Tsao, T.C. Chang, Y.P. Lin, Po-Tsun Liu, J.R. Chen |
| 43. | Bipolar magnetotransistor sensor with digital output Pages 1488-1491 R.D. Tikhonov |
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