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| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric Pages 675-679 C.X. Li, C.H. Leung, P.T. Lai, J.P. Xu |
| 3. | On the piezoelectric coupling constant of epitaxial Mg-doped GaN Pages 680-684 X. Xu, R.C. Woods |
| 4. | High voltage REBULF LDMOS with N+ buried layer Pages 685-688 Baoxing Duan, Yintang Yang, Bo Zhang |
| 5. | Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Pages 689-695 K. Sarpatwari, N.S. Dellas, O.O. Awadelkarim, S.E. Mohney |
| 6. | Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design Pages 696-700 Anwar Jarndal, Pouya Aflaki, Louay Degachi, Ahmed Birafane, Ammar Kouki, Renato Negra, Fadhel M. Ghannouchi |
| 7. | Ni–Au contacts to p-type GaN – Structure and properties Pages 701-709 Julita Smalc-Koziorowska, Szymon Grzanka, Elżbieta Litwin-Staszewska, Ryszard Piotrzkowski, Grzegorz Nowak, Michał Leszczynski, Piotr Perlin, Ewa Talik, Jan Kozubowski, Stanisław Krukowski |
| 8. | Effects of thermal annealing on structure, morphology and electrical properties of F16CuPc/α6T heterojunction thin films Pages 710-714 Rongbin Ye, Mamoru Baba, Koji Ohta, Kazunori Suzuki |
| 9. | Interface and electrical properties of La-silicate for direct contact of high-k with silicon Pages 715-719 K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai |
| 10. | Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric Pages 720-723 K. Kakushima, T. Koyanagi, K. Tachi, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai |
| 11. | Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer Pages 724-727 Miin-Horng Juang, C.C. Hwang, D.C. Shye, J.L. Wang, S.L. Jang |
| 12. | The direct evidence of substrate potential propagation in a gate-grounded NMOS Pages 728-731 Dao-Hong Yang, Jone F. Chen, Kuo-Ming Wu, J.R. Shih, Jian-Hsing Lee |
| 13. | Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO Pages 732-735 Y.F. Lu, Z.Z. Ye, Y.J. Zeng, L.P. Zhu, J.Y. Huang, B.H. Zhao |
| Short Communication |
| 14. | Ambient temperature characteristics of Schottky contacts on 4H–SiC aged in air at 350 °C Pages 736-740 Adetayo V. Adedeji, Ayayi C. Ahyi, John R. Williams, Suzanne E. Mohney, James D. Schofield |
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