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| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | E-beam-evaporated Al2O3 for InAs/AlSb metal–oxide–semiconductor HEMT development Pages 505-508 H.-K. Lin, D.-W. Fan, Y.-C. Lin, P.-C. Chiu, C.-Y. Chien, P.-W. Li, J.-I. Chyi, C.-H. Ko, T.-M. Kuan, M.-K. Hsieh, W.-C. Lee, C.H. Wann |
| 3. | Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1) Pages 509-515 Suthan Kissinger, Seong-Muk Jeong, Seok-Hyo Yun, Seung Jae Lee, Dong-Wook Kim, In-Hwan Lee, Cheul-Ro Lee |
| 4. | Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation Pages 516-519 Miin-Horng Juang, C.W. Chang, J.L. Wang, D.C. Shye, C.C. Hwang, S.-L. Jang |
| 5. | Compact capacitance modeling of a 3-terminal FET at zero drain–source voltage Pages 520-523 Benjamin Iñiguez, Oana Moldovan |
| 6. | Highly efficient undoped deep-blue electroluminescent device based on a novel pyrene derivative Pages 524-526 Zhiqiang Wang, Chen Xu, Weizhou Wang, Weijun Fu, Lianbin Niu, Baoming Ji |
| 7. | Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs Pages 527-529 Heng-Sheng Huang, Mu-Chun Wang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Ai-Erh Chuang, Chuan-Hsi Liu |
| 8. | Explicit quantum potential and charge model for double-gate MOSFETs Pages 530-535 Ferney Chaves, David Jiménez, Jordi Suñé |
| 9. | Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes Pages 536-540 N.H. Alvi, M. Riaz, G. Tzamalis, O. Nur, M. Willander |
| 10. | Substrate-free large gap InGaN solar cells with bottom reflector Pages 541-544 Chia-Lung Tsai, Guan-Shan Liu, Gong-Cheng Fan, Yu-Sheng Lee |
| 11. | Analysis of subthreshold conduction in short-channel recessed source/drain UTB SOI MOSFETs Pages 545-551 B. Sviličić, V. Jovanović, T. Suligoj |
| 12. | An alternative passivation approach for AlGaN/GaN HEMTs Pages 552-556 Heng-Kuang Lin, Hsiang-Lin Yu, Fan-Hsiu Huang |
| 13. | Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories Pages 557-563 Kichan Jeon, Sunyeong Lee, Dong Myong Kim, Dae Hwan Kim |
| 14. | Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology Pages 564-567 Chan-Yuan Hu, Jone F. Chen, Shih-Chih Chen, Shoou-Jinn Chang, Kay-Ming Lee, Chih-Ping Lee |
| 15. | Formation of ohmic contact by pre-annealing of shallow nanopores in macroporous silicon and its characterization Pages 568-574 S. Maji, R. Dev Das, M. Jana, C. Roychaudhuri, N. Mondal, S.K. Dutta, N.R. Bandopadhyay, H. Saha |
| 16. | Enhanced light output power of GaN-based light emitting diodes with overcut sideholes formed by wet etching Pages 575-578 Hyun Kyu Kim, Hyung Gu Kim, Hee Yun Kim, Jae Hyoung Ryu, Ji hye Kang, Nam Han, Periyayya Uthirakumar, Chang-Hee Hong |
| 17. | Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness Pages 579-581 Yaoqi Dong, Weiran Kong, Nhan Do, Shiuh Luen Wang, Gabriel Lee |
| 18. | DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths Pages 582-585 Heng-Kuang Lin, Fan-Hsiu Huang, Hsiang-Lin Yu |
| 19. | Contact resistance between Au and solution-processed CNT Pages 586-589 Seung Hoon Han, Sun Hee Lee, Ji Ho Hur, Jin Jang, Young-Bae Park, Glen Irvin, Paul Drzaic |
| 20. | Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers Pages 590-594 Y.K. Fu, C.H. Kuo, C.J. Tun, L.C. Chang |
| 21. | Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs Pages 595-604 Weimin Wu, Wei Yao, Gennady Gildenblat |
| 22. | High efficient organic ultraviolet photovoltaic devices based on gallium complex Pages 605-608 Zisheng Su, Bei Chu, Wenlian Li |
| Short Communication |
| 23. | Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device Pages 609-611 H.J. Hung, J.B. Kuo, D. Chen, C.T. Tsai, C.S. Yeh |
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