 |
| New Volume/Issue is now available on ScienceDirect |
|
| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | Open-circuit voltages: Theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers Pages 221-225 N. Stem, C.A.S. Ramos, M. Cid |
| 3. | Influence of gate misalignment on the electrical characteristics of MuGFETS Pages 226-230 Chi-Woo Lee, Aryan Afzalian, Isabelle Ferain, Ran Yan, Nima Dehdashti Akhavan, Weize Xiong, Jean-Pierre Colinge |
| 4. | A low insertion loss GaAs pHEMT switch utilizing dual n+-doping AlAs etching stop layers design Pages 231-234 Feng-Tso Chien, Da-Wei Lin, Chih-Wei Yang, Jeffrey S. Fu, Hsien-Chin Chiu |
| 5. | Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics Pages 235-242 Reydezel Torres-Torres, Rafael Venegas, Stefaan Decoutere |
| 6. | Quantitative prediction of junction leakage in bulk-technology CMOS devices Pages 243-251 R. Duffy, A. Heringa, V.C. Venezia, J. Loo, M.A. Verheijen, M.J.P. Hopstaken, K. van der Tak, M. de Potter, J.C. Hooker, P. Meunier-Beillard, R. Delhougne |
| 7. | Capacitances in micro-strip detectors: A conformal mapping approach Pages 252-258 Paolo Walter Cattaneo |
| 8. | Capacitance–voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs Pages 259-267 Z. Tang, C.R. Wie |
| 9. | Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations Pages 268-274 Nebojsa Jankovic, Petar Igic, Naoki Sakurai |
| 10. | Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor Pages 275-278 Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, Wen-Chau Liu |
| 11. | Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts Pages 279-282 Li-Yang Chen, Shiou-Ying Cheng, Chien-Chang Huang, Tzu-Pin Chen, Tsung-Han Tsai, Yi-Jung Liu, Tai-You Chen, Chi-Hsiang Hsu, Wen-Chau Liu |
| 12. | Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design Pages 283-287 Pei Wang, Bin Cao, Wei Wei, Zhiyin Gan, Sheng Liu |
| 13. | J–V characteristics of GaN containing traps at several discrete energy levels Pages 288-293 Anubha Jain, Pankaj Kumar, S.C. Jain, R. Muralidharan, Suresh Chand, Vikram Kumar |
| 14. | Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs Pages 294-298 T. Okayama, Mulpuri V. Rao |
| 15. | High performance pMOS circuits with silicon-on-glass TFTs Pages 299-302 Jae Ik Kim, Jae Won Choi, Wonjae Choi, Mallory Mativenga, Jin Jang, Carlo Kosik Williams, Chuan Che Wang, Eric Mozdy, Jeffrey Cites, Jackson Lai, Timothy J. Tredwell |
| 16. | Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer Pages 303-306 Miin-Horng Juang, C.W. Chang, C.W. Huang, J.L. Wang, D.C. Shye, C.C. Hwang, S.L. Jang |
| 17. | Parameter set and data sampling strategy for accurate yet efficient statistical MOSFET compact model extraction Pages 307-315 B. Bindu, B. Cheng, G. Roy, X. Wang, S. Roy, A. Asenov |
| 18. | Role of the substrate during pseudo-MOSFET drain current transients Pages 316-322 K. Park, P. Nayak, D.K. Schroder |
| 19. | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment Pages 323-326 Dong Jin Park, Jung Wook Lim, Byung Ok Park |
| 20. | The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs Pages 327-335 O.M. Alatise, K.S.K. Kwa, S.H. Olsen, A.G. O’Neill |
| 21. | Silicon on insulator MESFETs for RF amplifiers Pages 336-342 Seth J. Wilk, Asha Balijepalli, Joseph Ervin, William Lepkowski, Trevor J. Thornton |
| Send my e-mail in plain text format |
| Modify or Remove My Alerts |
| Access the ScienceDirect Info site if you have questions about this message or other features of this service. |
| This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2010 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 22224:264660658:11207:224369608 |
