 |
| New Volume/Issue is now available on ScienceDirect |
|
| 1. | Editorial Board Page IFC |
| Letters |
| 2. | Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection Pages 1-3 F. Semendy, S. Singh, M. Litz, P. Wijewarnasuriya, K. Blaine, N. Dhar |
| 3. | Study of GaN epilayers growth on freestanding Si cantilevers Pages 4-7 Jing Chen, Xi Wang, Aimin Wu, Bo Zhang, Xi Wang, Yuxin Wu, Jianjun Zhu, Hui Yang |
| Regular Papers |
| 4. | Experimental measurement of work function in doped silicon surfaces Pages 8-13 Alexander Novikov |
| 5. | Pulse-agitated self-convergent programming for 4-bit per cell dual charge storage layer flash memory Pages 14-17 Gang Zhang, Won Jong Yoo |
| 6. | Operational upsets and critical new bit errors in CMOS digital inverters due to high power pulsed electromagnetic interference Pages 18-21 Kyechong Kim, Agis A. Iliadis |
| 7. | A comparative study of photoconductivity and carrier transport in a-Si:H p–i–n solar cells with different back contacts Pages 22-27 R. Kaplan, B. Kaplan, S.S. Hegedus |
| 8. | Analysis of noise in CMOS image sensor based on a unified time-dependent approach Pages 28-36 Igor Brouk, Amikam Nemirovsky, Kamal Alameh, Yael Nemirovsky |
| 9. | Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents Pages 37-41 Yun-Chi Wu, Edward Yi Chang, Yueh-Chin Lin, Chi-Chung Kei, Mantu K. Hudait, Marko Radosavljevic, Yuen-Yee Wong, Chia-Ta Chang, Jui-Chien Huang, Shih-Hsuan Tang |
| 10. | An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect Pages 42-47 Xiaoxu Cheng, Miao Li, Yan Wang |
| 11. | Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure Pages 48-51 K. Baghbani Parizi, N. Peyvast, B. Kheyraddini Mousavi, S. Mohajerzadeh, M. Fathipour |
| 12. | CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits Pages 52-57 Mohsen Hayati, Abbas Rezaei, Majid Seifi |
| 13. | AC conductivity and dielectric properties of thermally evaporated PbTe thin films Pages 58-62 L. Kungumadevi, R. Sathyamoorthy, A. Subbarayan |
| 14. | Improved infrared (IR) microscope measurements and theory for the micro-electronics industry Pages 63-66 C.H. Oxley, R.H. Hopper, G. Hill, G.A. Evans |
| 15. | Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base Pages 67-78 A. Oudir, M. Mahdouani, S. Mansouri, R. Bourguiga, F. Pardo, J.L. Pelouard |
| 16. | Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator Pages 79-83 S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka |
| Send my e-mail in plain text format |
| Modify or Remove My Alerts |
| Access the ScienceDirect Info site if you have questions about this message or other features of this service. |
| This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2009 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 11204:249829912:11207:211992534 |
