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| 1. | Editorial Board Page IFC |
| Editorial |
| 2. | Foreword Page 1211 Max C. Lemme, Siegfried Mantl |
| Regular Papers |
| 3. | Advanced SOI CMOS transistor technology for high performance microprocessors Pages 1212-1219 M. Horstmann, M. Wiatr, A. Wei, J. Hoentschel, Th. Feudel, Th. Scheiper, R. Stephan, M. Gerhadt, S. Krügel, M. Raab |
| 4. | Plastic circuits and tags for 13.56 MHz radio-frequency communication Pages 1220-1226 Kris Myny, Soeren Steudel, Peter Vicca, Monique J. Beenhakkers, Nick A.J.M. van Aerle, Gerwin H. Gelinck, Jan Genoe, Wim Dehaene, Paul Heremans |
| 5. | Computing based on the physics of nano devices—A beyond-CMOS approach to human-like intelligent systems Pages 1227-1241 Tadashi Shibata |
| 6. | A Haynes–Shockley experiment for spin-polarized electron transport in silicon Pages 1242-1245 Ian Appelbaum |
| 7. | Mobility extraction in SOI MOSFETs with sub 1 nm body thickness Pages 1246-1251 M. Schmidt, M.C. Lemme, H.D.B. Gottlob, F. Driussi, L. Selmi, H. Kurz |
| 8. | Improved effective mobility extraction in MOSFETs Pages 1252-1256 S.M. Thomas, T.E. Whall, E.H.C. Parker, D.R. Leadley, R.J.P. Lander, G. Vellianitis, J.R. Watling |
| 9. | Silicon nanowire FETs with uniaxial tensile strain Pages 1257-1262 S.F. Feste, J. Knoch, S. Habicht, D. Buca, Q.-T. Zhao, S. Mantl |
| 10. | DC and low frequency noise characterization of FinFET devices Pages 1263-1267 K. Bennamane, T. Boutchacha, G. Ghibaudo, M. Mouis, N. Collaert |
| 11. | Investigation of 1/f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion Pages 1268-1272 J. Gyani, M. Valenza, S. Soliveres, F. Martinez, C. Le Royer, E. Augendre, K. Romanjek, C. Drazek |
| 12. | Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3 Pages 1273-1279 Gerald Lucovsky, Kwun-Bum Chung, Leonardi Miotti, Karen Pas Bastos, Carolina Amado, Darrell Schlom |
| 13. | Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs Pages 1280-1286 A. Hubert, M. Bawedin, S. Cristoloveanu, T. Ernst |
| 14. | High density 3D memory architecture based on the resistive switching effect Pages 1287-1292 C. Kügeler, M. Meier, R. Rosezin, S. Gilles, R. Waser |
| 15. | A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Pages 1293-1302 P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti, J. Walczak |
| 16. | Fin shape fluctuations in FinFET: Correlation to electrical variability and impact on 6-T SRAM noise margins Pages 1303-1312 Emanuele Baravelli, Luca De Marchi, Nicolò Speciale |
| 17. | Non-metallic effects in silicided gate MOSFETs Pages 1313-1317 Noel Rodriguez, Francisco Gamiz, Raphael Clerc, Carlos Sampedro, Andres Godoy, Gerard Ghibaudo |
| 18. | Impact ionization rates for strained Si and SiGe Pages 1318-1324 Thanh Viet Dinh, Christoph Jungemann |
| 19. | Modeling and validation of piezoresistive coefficients in Si hole inversion layers Pages 1325-1333 A.T. Pham, C. Jungemann, B. Meinerzhagen |
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