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| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | The split-gate flash memory with an extra select gate for automotive applications Pages 1059-1062 Yong-Shiuan Tsair, Yean-Kuen Fang, Yu-Hsiung Wang, Wen-Ting Chu, Chia-Ta Hsieh, Yung-Tao Lin, Chung S. Wang, Myron Wong, Scott Lee, Richard Smolen, Bill Liu |
| 3. | Stability of PMMA on P3HT PTFTs under stress Pages 1063-1066 M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal, B. Iñiguez |
| 4. | Comparative analysis of unity gain frequency of top and bottom-contact organic thin film transistors Pages 1067-1075 M. Nurul Islam, B. Mazhari |
| 5. | Method of extracting effective channel length for nano-scale n-MOSFETs Pages 1076-1085 H.W. Choi, N.H. Lee, H.S. Kang, B.K. Kang |
| 6. | Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation Pages 1086-1091 H.K. Lee, Y.M. Song, Y.T. Lee, J.S. Yu |
| 7. | A study of gateless OTP cell using a 45 nm CMOS compatible process Pages 1092-1098 Yi-Hung Tsai, Kai-Chun Lin, Hsin-Yi Chiu, Hung-Sheng Shih, Ya-Chin King, Chrong Jung Lin |
| 8. | Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency Pages 1099-1102 Eun-Ju Hong, Kyeong-Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Hyeong-Seok Kim |
| 9. | Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Pages 1103-1106 Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer |
| 10. | Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors Pages 1107-1111 Yu-Wu Wang, Horng-Long Cheng |
| 11. | Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure Pages 1112-1115 Seong-Dong Kim |
| 12. | Preparation and characterization of solid n-TiO2/p-NiO hetrojunction electrodes for all-solid-state dye-sensitized solar cells Pages 1116-1125 Yi-Mu Lee, Chun-Hung Lai |
| 13. | Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors Pages 1126-1129 C. Sandow, J. Knoch, C. Urban, Q.-T. Zhao, S. Mantl |
| 14. | Multiband simulation of quantum transport in nanoscale double-gate MOSFETs Pages 1130-1134 Hideyuki Iwata, Toshihiro Matsuda, Takashi Ohzone |
| 15. | Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates Pages 1135-1143 Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima |
| 16. | Finite element simulation of metal–semiconductor–metal photodetector Pages 1144-1148 G. Guarino, W.R. Donaldson, M. Mikulics, M. Marso, P. Kordoš, Roman Sobolewski |
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