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| 1. | Editorial Board Page IFC |
| Review |
| 2. | Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor Pages 469-472 R. Abdia, A. El Kaaouachi, A. Nafidi, G. Biskupski, J. Hemine |
| Letter |
| 3. | Effects of electrodes on the properties of sol–gel PZT based capacitors in FeRAM Pages 473-477 Ming-Ming Zhang, Ze Jia, Tian-Ling Ren |
| Regular Papers |
| 4. | Current conduction models in the high temperature single-electron transistor Pages 478-482 Christian Dubuc, Arnaud Beaumont, Jacques Beauvais, Dominique Drouin |
| 5. | Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors Pages 483-489 Nicolas Zerounian, Frédéric Aniel, Benoît Barbalat, Pascal Chevalier, Alain Chantre |
| 6. | A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFETs Pages 490-496 T.K. Chiang |
| 7. | Effect of strain on the performance of MOSFET-like and p–i–n carbon nanotube FETs Pages 497-503 Iman Hassani nia, Mohammad Hossein Sheikhi |
| 8. | Continuous model for independent double gate MOSFET Pages 504-513 M. Reyboz, P. Martin, T. Poiroux, O. Rozeau |
| 9. | Analytical model of short-channel gate enclosed transistors using Green functions Pages 514-519 P. López, J. Hauer, B. Blanco-Filgueira, D. Cabello |
| 10. | Small-signal modeling of MOSFET cascode with merged diffusion Pages 520-525 Yeonam Yun, Hee-Sauk Jhon, Jongwook Jeon, Jaehong Lee, Hyungcheol Shin |
| 11. | Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective Pages 526-529 Hangfeng Ji, Jo Das, Marianne Germain, Martin Kuball |
| 12. | Capacitance and conductance characteristics of silicon nanocrystal metal–insulator–semiconductor devices Pages 530-539 C. Flynn, D. König, I. Perez-Wurfl, G. Conibeer, M.A. Green |
| 13. | Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs Pages 540-547 B. Sviličić, V. Jovanović, T. Suligoj |
| 14. | Symmetric linearization method for double-gate and surrounding-gate MOSFET models Pages 548-556 Gajanan Dessai, Aritra Dey, Gennady Gildenblat, Geert D.J. Smit |
| 15. | Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys Pages 557-561 Sung-Min Yoon, Seung-Yun Lee, Soon-Won Jung, Young-Sam Park, Byoung-Gon Yu |
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