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| 1. | Editorial Board Page IFC |
| Editorial |
| 2. | Foreword Page 401 Luca Selmi, David Esseni, Pierpaolo Palestri |
| Regular Papers |
| 3. | Low-voltage scaling limitations for nano-scale CMOS LSIs Pages 402-410 Kiyoo Itoh, Masashi Horiguchi |
| 4. | Innovative devices for integrated circuits – A design perspective Pages 411-417 D. Schmitt-Landsiedel, C. Werner |
| 5. | Impact of variability on the performance of SOI Schottky barrier MOSFETs Pages 418-423 S.F. Feste, M. Zhang, J. Knoch, S. Mantl |
| 6. | Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs Pages 424-432 N. Serra, P. Palestri, G.D.J. Smit, L. Selmi |
| 7. | High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack Pages 433-437 Tao Chuan Lim, Olivier Rozeau, Christel Buj, Michel Paccaud, Sylvie Lepilliet, Gilles Dambrine, François Danneville |
| 8. | Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Pages 438-444 S. Monaghan, P.K. Hurley, K. Cherkaoui, M.A. Negara, A. Schenk |
| 9. | Simulation of self-heating effects in different SOI MOS architectures Pages 445-451 M. Braccioli, G. Curatola, Y. Yang, E. Sangiorgi, C. Fiegna |
| 10. | On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Pages 452-461 D. Rideau, M. Feraille, M. Michaillat, Y.M. Niquet, C. Tavernier, H. Jaouen |
| 11. | Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs Pages 462-467 Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani |
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