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1. | Editorial Board Page IFC |
Regular Papers |
2. | The charge transport mechanism in silicon nitride: Multi-phonon trap ionization Pages 251-255 A.V. Vishnyakov, Yu.N. Novikov, V.A. Gritsenko, K.A. Nasyrov |
3. | Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs Pages 256-265 Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta, Amitava DasGupta |
4. | A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric Pages 266-270 Jae-Hong Kwon, Sang-Il Shin, Jinnil Choi, Myung-Ho Chung, Hochul Kang, Byeong-Kwon Ju |
5. | Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (1 0 0) and (1 1 0) silicon surfaces Pages 271-275 Md. Khalid Ashraf, Asif Islam Khan, Anisul Haque |
6. | Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure Pages 276-278 Feng Rao, Zhitang Song, Liangcai Wu, Yuefeng Gong, Songlin Feng, Bomy Chen |
7. | Charge trapping behavior of SiO2-Anodic Al2O3–SiO2 gate dielectrics for nonvolatile memory applications Pages 279-284 Chun-Hsien Huang, En-Jui Li, Wai-Jyh Chang, Na-Fu Wang, Chen-I Hung, Mau-Phon Houng |
8. | A comprehensive model of frequency dispersion in 4H–SiC MESFET Pages 285-291 Hongliang Lu, Yimen Zhang, Yuming Zhang, Tao Zhang |
9. | Gated tunnel diode in oscillator applications with high frequency tuning Pages 292-296 L.-E. Wernersson, M. Ärlelid, M. Egard, E. Lind |
10. | Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors Pages 297-307 I. Marano, V. d’Alessandro, N. Rinaldi |
11. | Performance evaluation of sphere-form cathodes in the fabrication of optoelectronic In2O3SnO2 PET Pages 308-313 P.S. Pa |
12. | Measurement of the MOSFET drain current variation under high gate voltage Pages 314-319 Kazuo Terada, Tetsuo Chagawa, Jianyu Xiang, Katsuhiro Tsuji, Takaaki Tsunomura, Akio Nishida |
13. | Visualization of local gate control in a ZnO inter-nanowire junction device Pages 320-323 Jin-Hyung Lim, Hyun Jin Ji, Goo-Eun Jung, Kyung Hoon Chung, Gyu-Tae Kim, Jeong Sook Ha, Ji-Yong Park, Se-Jong Kahng |
14. | Negative capacitance in light-emitting devices Pages 324-328 C.Y. Zhu, L.F. Feng, C.D. Wang, H.X. Cong, G.Y. Zhang, Z.J. Yang, Z.Z. Chen |
15. | Zinc tin oxide based driver for highly transparent active matrix OLED displays Pages 329-331 Patrick Görrn, Fatemeh Ghaffari, Thomas Riedl, Wolfgang Kowalsky |
16. | An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Pages 332-335 X.L. Wang, T.S. Chen, H.L. Xiao, J. Tang, J.X. Ran, M.L. Zhang, C. Feng, Q.F. Hou, M. Wei, L.J. Jiang, J.M. Li, Z.G. Wang |
17. | Optical properties studies in InGaN/GaN multiple-quantum well Pages 336-340 Lihong Zhu, Baolin Liu |
18. | Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT Pages 341-348 M.A. Huque, S.A. Eliza, T. Rahman, H.F. Huq, S.K. Islam |
19. | Discussions and extension of van Vliet’s noise model for high speed bipolar transistors Pages 349-354 Kejun Xia, Guofu Niu |
20. | Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation Pages 355-358 Banani Sen, Hei Wong, B.L. Yang, P.K. Chu, K. Kakushima, H. Iwai |
21. | Experimental characterization of the subthreshold leakage current in triple-gate FinFETs Pages 359-363 A. Tsormpatzoglou, C.A. Dimitriadis, M. Mouis, G. Ghibaudo, N. Collaert |
22. | Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators Pages 364-370 M.I. Vexler, A. Kuligk, B. Meinerzhagen |
23. | Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile Pages 371-375 Miin-Horng Juang, S.-H. Cheng, S.-L. Jang |
24. | A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires Pages 376-382 A. Esposito, M. Luisier, M. Frey, A. Schenk |
25. | Design and numerical analysis of a polarization-insensitive quantum well optoelectronic integrated amplifier-switch Pages 383-388 E. Darabi, V. Ahmadi |
26. | Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM Pages 389-391 Seong-Wan Ryu, Jin-Woo Han, Chung-Jin Kim, Sungho Kim, Yang-Kyu Choi |
27. | Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack Pages 392-396 F. Rochette, M. Cassé, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, F. Boulanger |
Short Communication |
28. | Pure red organic light-emitting diode based on a europium complex Pages 397-399 Qin Xue, Ping Chen, Jianhua Lu, Guohua Xie, Jingying Hou, Shiyong Liu, Yi Zhao, Liying Zhang, Bin Li |
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