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| 1. | Editorial Board Page IFC |
| Letters |
| 2. | Maximum powers of low-loss series–shunt FET RF switches Pages 117-119 Z. Yang, X. Hu, J. Yang, G. Simin, M. Shur, R. Gaska |
| 3. | Red electroluminescent devices based on rubrene derivative in 4,4′-N,N′-dicarubreneazole-biphenyl host and its application in white light emitting device for lighting purpose Pages 120-123 Tianle Li, Wenlian Li, Xiao Li, Liangliang Han, Bei Chu, Mingtao Li, Zhizhi Hu, Zhiqiang Zhang |
| 4. | A novel vertical channel self-aligned split-gate flash memory Pages 124-126 Dake Wu, Falong Zhou, Ru Huang, Yan Li, Yimao Cai, Ao Guo, Xing Zhang, Yangyuan Wang |
| Regular Papers |
| 5. | Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET Pages 127-133 Augustin Cathignol, Samuel Bordez, Antoine Cros, Krysten Rochereau, Gérard Ghibaudo |
| 6. | Raman study of GaAs/Ga1-xAlxAs quantum dots: A dielectric continuum approach Pages 134-139 Qing-Hu Zhong, Cui-Hong Liu |
| 7. | An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass Pages 140-144 Yu Yuan, Bo Yu, Jooyoung Song, Yuan Taur |
| 8. | Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements Pages 145-149 Emmanuel Torres-Rios, Reydezel Torres-Torres, Edmundo A. Gutiérrez-D |
| 9. | Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs Pages 150-153 K.-I. Na, S. Cristoloveanu, Y.-H. Bae, P. Patruno, W. Xiong, J.-H. Lee |
| 10. | Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTs Pages 154-159 Ke-Shian Chen, Edward Yi Chang, Chia-Ching Lin, Cheng-Shih Lee |
| 11. | New modes of THz generation by low-temperature-grown GaAsSb Pages 160-165 S. Hargreaves, L.J. Bignell, R.A. Lewis, J. Sigmund, H.L. Hartnagel |
| 12. | Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs Pages 166-169 P.T. Törmä, O. Svensk, M. Ali, S. Suihkonen, M. Sopanen, M.A. Odnoblyudov, V.E. Bougrov |
| 13. | A model for the C–V characteristics of the metal–ferroelectric–insulator–semiconductor structure Pages 170-175 Jun Jie Zhang, Jing Sun, Xue Jun Zheng |
| 14. | Efficient electron transfers in ZnO nanorod arrays with N719 dye for hybrid solar cells Pages 176-180 Rattanavoravipa Thitima, Chareonsirithavorn Patcharee, Sagawa Takashi, Yoshikawa Susumu |
| 15. | RF performance of GaAs pHEMT switches with various upper/lower δ-doped ratio designs Pages 181-184 Hsien-Chin Chiu, Jeffrey S. Fu, Chung-Wen Chen |
| 16. | Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs Pages 185-189 Dongping Xiao, Dominique Schreurs, W. De Raedt, J. Derluyn, M. Germain, B. Nauwelaers, G. Borghs |
| 17. | On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Pages 190-194 Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau Liu |
| 18. | Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models Pages 195-203 Lifang Lou, Juin J. Liou, Shurong Dong, Yan Han |
| 19. | Passivation of 4H–SiC Schottky barrier diodes using aluminum based dielectrics Pages 204-210 A. Kumta, Rusli, J.H. Xia |
| 20. | Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene–phenylene based light emitting diodes Pages 211-217 B. Romero, B. Arredondo, A.L. Alvarez, R. Mallavia, A. Salinas, X. Quintana, J.M. Otón |
| 21. | A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs Pages 218-224 Venkatnarayan Hariharan, Juzer Vasi, V. Ramgopal Rao |
| 22. | Drain bias dependent bias temperature stress instability in a-Si:H TFT Pages 225-233 Z. Tang, M.S. Park, S.H. Jin, C.R. Wie |
| 23. | Parameter determination of Schottky-barrier diode model using differential evolution Pages 234-240 Kaier Wang, Meiying Ye |
| 24. | Photocapacitance study at p–i–n photodiode by numerical C–V integration Pages 241-245 A. Sertap Kavasoglu, Nese Kavasoglu, Sener Oktik |
| 25. | Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface Pages 246-250 Ching-Lin Fan, Tsung-Hsien Yang, Ping-Cheng Chiu, Cheng-Han Huang, Cheng-I Lin |
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