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| 1. | Editorial Board Page IFC |
| Regular Papers |
| 2. | Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits Pages 1-6 Ruonan Wang, Yong Cai, Kevin J. Chen |
| 3. | 4H–SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain Pages 7-10 Huili Zhu, Xiaping Chen, Jiafa Cai, Zhengyun Wu |
| 4. | Surface potential equation for bulk MOSFET Pages 11-13 G. Gildenblat, Z. Zhu, C.C. McAndrew |
| 5. | Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes Pages 14-17 P.G. Muzykov, A.V. Bolotnikov, T.S. Sudarshan |
| 6. | PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations Pages 18-29 W. Wu, X. Li, G. Gildenblat, G.O. Workman, S. Veeraraghavan, C.C. McAndrew, R. van Langevelde, G.D.J. Smit, A.J. Scholten, D.B.M. Klaassen, J. Watts |
| 7. | Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Pages 30-35 Qin Zhang, Surajit Sutar, Thomas Kosel, Alan Seabaugh |
| 8. | Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regime Pages 36-41 Sunil Vallur, R.P. Jindal |
| 9. | Transient charging current measurements and modelling in silicon nanocrystal floating gate devices Pages 42-48 A. Beaumont, A. Souifi |
| 10. | A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs Pages 49-53 Feilong Liu, Jian Zhang, Frank He, Feng Liu, Lining Zhang, Mansun Chan |
| 11. | Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices Pages 54-56 I. Pappas, G. Ghibaudo, C.A. Dimitriadis, C. Fenouillet-Béranger |
| 12. | Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs Pages 57-62 S. Jit, Prashant Kumar Pandey, Pramod Kumar Tiwari |
| 13. | Low voltage charge-balanced capacitance–voltage conversion circuit for one-side-electrode-type fluid-based inclination sensor Pages 63-69 Asrulnizam Bin Abd Manaf, Yoshinori Matsumoto |
| 14. | Electron transport properties of bulk mercury–cadmium–telluride at 77 K Pages 70-78 C. Palermo, L. Varani, J.C. Vaissière, E. Starikov, P. Shiktorov, V. Gružinskis, B. Azaïs |
| 15. | Steady state analysis of optical bistability in distributed coupling coefficient DFB semiconductor laser amplifiers Pages 79-85 M. Saeed Tahvili, M. Hossein Sheikhi |
| 16. | A computational load-pull method with harmonic loading for high-efficiency investigations Pages 86-94 O. Bengtsson, L. Vestling, J. Olsson |
| 17. | Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers Pages 95-101 Xiaomin Jin, Bennet Yun Tarng, Shun-Lien Chuang |
| 18. | Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy Pages 102-106 Mantu K. Hudait, M. Brenner, S.A. Ringel |
| 19. | Analytic resolution of Poisson–Boltzmann equation in nanometric semiconductor junctions Pages 107-116 Hugues Murray |
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