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| 1. | Editorial Board Page IFC |
| Letters |
| 2. | Structural and optical properties of ZrB2 and HfxZr1−xB2 films grown by vicinal surface epitaxy on Si(1 1 1) substrates Pages 1687-1690 R. Roucka, Y.-J. An, A.V.G. Chizmeshya, V.R. D’Costa, J. Tolle, J. Menéndez and J. Kouvetakis |
| 3. | A poly-Si AMOLED display with high uniformity Pages 1691-1693 KeeChan Park, Jae-Hong Jeon, YoungIl Kim, Jae Beom Choi, Young-Jin Chang, ZhiFeng Zhan and ChiWoo Kim |
| Regular Papers |
| 4. | Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology Pages 1694-1702 Shin-ichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike and Eiichi Suzuki |
| 5. | Transport boundary condition for semiconductor structures Pages 1703-1709 I.N. Volovichev, J.E. Velázquez-Perez and Yu.G. Gurevich |
| 6. | Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(1 0 0) Si substrates Pages 1710-1716 Soumya Krishnamoorthy and Agis A. Iliadis |
| 7. | Study the effect of distribution of density of states on the depletion width of organic Schottky contacts Pages 1717-1721 Arash Takshi, Milad Mohammadi and John D. Madden |
| 8. | Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations Pages 1722-1729 Michaela Weidemann, Alexander Kloes and Benjamin Iñiguez |
| 9. | RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements Pages 1730-1734 H. Contopanagos, F. Zacharatos and A.G. Nassiopoulou |
| 10. | A parasitic resistance measurement method exploiting gate current–density characteristics in ultra-short Schottky-gate FETs Pages 1735-1741 Takashi Inoue and Walter Contrata |
| 11. | An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters Pages 1742-1750 A. Oudir, M. Mahdouani, R. Bourguiga, F. Pardo and J.L. Pelouard |
| 12. | Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs Pages 1751-1754 Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen and Cor Claeys |
| 13. | Unified tunnelling-diffusion theory for Schottky and very thin MOS structures Pages 1755-1765 J. Racko, P. Valent, P. Benko, D. Donoval, L. Harmatha, P. Pinteš and J. Breza |
| 14. | A new approach for physical-based modelling of bipolar power semiconductor devices Pages 1766-1772 R. Chibante, A. Araújo and A. Carvalho |
| 15. | A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET Pages 1773-1777 Gang Zhang, Won Jong Yoo and Chung Ho Ling |
| 16. | A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface Pages 1778-1781 G. Song, M.Y. Ali and M. Tao |
| 17. | Numerical analysis of SiGe heterojunction bipolar phototransistor based on virtual substrate Pages 1782-1790 Yong Zhang, Cheng Li, Song-Yan Chen, Hong-Kai Lai and Jun-Yong Kang |
| 18. | Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study Pages 1791-1795 S. Vitanov and V. Palankovski |
| 19. | Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation Pages 1796-1801 Enrico Furno, Francesco Bertazzi, Michele Goano, Giovanni Ghione and Enrico Bellotti |
| 20. | Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Pages 1802-1805 Michael E. Levinshtein, Pavel A. Ivanov, Tigran T. Mnatsakanov, John W. Palmour, Mrinal K. Das and Brett A. Hull |
| 21. | Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer Pages 1806-1809 Fujun Zhang, Zheng Xu, Suling Zhao, Liwei Wang and Lifang Lu |
| 22. | A quantum mechanical mobility model for scaled NMOS transistors with ultra-thin high-K dielectrics and metal gate electrodes Pages 1810-1814 Yanli Zhang and Marvin H. White |
| 23. | Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs Pages 1815-1820 Chi-Woo Lee, Dimitri Lederer, Aryan Afzalian, Ran Yan, Nima Dehdashti, Weize Xiong and Jean-Pierre Colinge |
| 24. | Long-wave (10 μm) infrared light emitting diode device performance Pages 1821-1824 Naresh C. Das, John Bradshaw, Fred Towner and R. Leavitt |
| 25. | Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz Pages 1825-1828 Z. Jin, Y. Su, W. Cheng, X. Liu, A. Xu and M. Qi |
| 26. | InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Pages 1829-1832 James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman and J. Brad Boos |
| 27. | Bismuth doped ZnSe films fabricated on silicon substrates by pulsed laser deposition Pages 1833-1836 Yiqun Shen, Ning Xu, Wei Hu, Xiaofeng Xu, Jian Sun, Zhifeng Ying and Jiada Wu |
| Errata |
| 28. | Corrigendum to “An analytical channel thermal noise model for deep sub-micron MOSFETs with short channel effects” [Solid State Electronics 51(7) (2007) 1034–1038] Page 1837 Jongwook Jeon, Jong Duk Lee, Byung-Gook Park and Hyungcheol Shin |
| 29. | Erratum to “Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory” [Solid State Electronics 52(9) (2008) 1452–1459] Page 1838 S. Jacob, B. De Salvo, L. Perniola, G. Festes, S. Bodnar, R. Coppard, J.F. Thiery, T. Pate-Cazal, C. Bongiorno, S. Lombardo, J. Dufourcq, E. Jalaguier, T. Pedron, F. Boulanger and S. Deleonibus |
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