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| 1. | Editorial Board Page IFC |
| 2. | Foreword Page 1473 Agis A. Iliadis and Curt Richter |
| 3. | Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Pages 1474-1481 Quentin Rafhay, Raphaël Clerc, Gérard Ghibaudo and Georges Pananakakis |
| 4. | Design and optimization of the SOI field effect diode (FED) for ESD protection Pages 1482-1485 Yang Yang, Akram A. Salman, Dimitris E. Ioannou and Stephen G. Beebe |
| 5. | Capacitance modeling of short-channel double-gate MOSFETs Pages 1486-1490 Håkon Børli, Sigbjørn Kolberg and Tor A. Fjeldly |
| 6. | Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices Pages 1491-1497 Gan Wang and Marvin H. White |
| 7. | Fabrication and characterization of fin SONOS flash memory with separated double-gate structure Pages 1498-1504 Jang-Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Sangwoo Kang, Dong-Hua Lee, Seongjae Cho, Doo-Hyun Kim, Gil Sung Lee, Won-Bo Sim, Younghwan Son, Hyungcheol Shin, Jong Duk Lee and Byung-Gook Park |
| 8. | Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model Pages 1505-1511 B. Sviličić, V. Jovanović and T. Suligoj |
| 9. | Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks Pages 1512-1517 Chung-Hao Fu, Po-Yen Chien, Kuei-Shu Chang-Liao, Tien-Ko Wang and Wen-Fa Wu |
| 10. | Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer Pages 1518-1524 Tzu-I Tsai, Horng-Chih Lin, Yao-Jen Lee, King-Sheng Chen, Jeff Wang, Fu-Kuo Hsueh, Tien-Sheng Chao and Tiao-Yuan Huang |
| 11. | New EEPROM concept for single bit operation Pages 1525-1529 J.R. Raguet, R. Laffont, R. Bouchakour, V. Bidal, A. Regnier and J.M. Mirabel |
| 12. | Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices Pages 1530-1535 Chin-Lung Cheng, Chien-Wei Liu, Kuei-Shu Chang-Liao, Ping-Hung Tsai, Jin-Tsong Jeng, Sung-Wei Huang and Bau-Tong Dai |
| 13. | Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory Pages 1536-1541 Akeed A. Pavel, Mehjabeen A. Khan, Phumin Kirawanich and N.E. Islam |
| 14. | Sensitivity of static noise margins to random dopant variations in 6-T SRAM cells Pages 1542-1549 Liviu Oniciuc and Petru Andrei |
| 15. | An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test Pages 1550-1554 C. Le Roux, L. Lopez, A. Firiti, J.L. Ogier, F. Lalande, R. Laffont and G. Micolau |
| 16. | Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells Pages 1555-1562 Esau Kanyogoro, Martin Peckerar, Harold Hughes and Mike Liu |
| 17. | Two-band k · p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility Pages 1563-1568 V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina and S. Selberherr |
| 18. | The role of carbon on performance of strained-Si:C surface channel NMOSFETs Pages 1569-1572 M.H. Lee, S.T. Chang, S. Maikap and C.-F. Huang |
| 19. | Novel SONOS – type nonvolatile memory device with stacked tunneling and charge trapping layers Pages 1573-1577 Ping-Hung Tsai, Kuei-Shu Chang-Liao, Tai-Yu Wu, Tien-Ko Wang, Pei-Jer Tzeng, Cha-Hsin Lin, Lung-Sheng Lee and Ming-Jin Tsai |
| 20. | NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications Pages 1578-1583 Weon Wi Jang, Jun-Bo Yoon, Min-Sang Kim, Ji-Myoung Lee, Sung-Min Kim, Eun-Jung Yoon, Keun Hwi Cho, Sung-Young Lee, In-Hyuk Choi, Dong-Won Kim and Donggun Park |
| 21. | Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors Pages 1584-1588 Ching-Sen Lu, Horng-Chih Lin and Tiao-Yuan Huang |
| 22. | Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference Pages 1589-1593 Kyechong Kim and Agis A. Iliadis |
| 23. | Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil Pages 1594-1601 Abbas Jamshidi-Roudbari, Po-Chin Kuo and Miltiadis Hatalis |
| 24. | High-speed thermal analysis of high power diode arrays Pages 1602-1605 N. Rada, G. Triplett, S. Graham and S. Kovaleski |
| 25. | A 2D non-parabolic six-moments model Pages 1606-1609 M. Vasicek, J. Cervenka, M. Wagner, M. Karner and T. Grasser |
| 26. | Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency Pages 1610-1614 Ruchika Aggarwal, Anju Agrawal, Mridula Gupta and R.S. Gupta |
| 27. | Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal–oxide–semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric Pages 1615-1618 C.P. Chen, T.D. Lin, Y.J. Lee, Y.C. Chang, M. Hong and J. Kwo |
| 28. | Auxiliary components for kilopixel transition edge sensor arrays Pages 1619-1624 Ari-David Brown, David Chuss, Vilem Mikula, Ross Henry, Edward Wollack, Yue Zhao, Gene C. Hilton and James A. Chervenak |
| 29. | Modeling and design of a monolithically integrated power converter on SiC Pages 1625-1630 L.C. Yu, K. Sheng and J.H. Zhao |
| 30. | Challenges in SiC power MOSFET design Pages 1631-1635 Kevin Matocha |
| 31. | Demonstration of the first SiC power integrated circuit Pages 1636-1646 Kuang Sheng, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, Petre Alexandrov and Leonid Fursin |
| 32. | Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio Pages 1647-1651 Rocco J. Parro, Maximilian C. Scardelletti, Nicholas C. Varaljay, Sloan Zimmerman and Christian A. Zorman |
| 33. | Proton-induced SEU in SiGe digital logic at cryogenic temperatures Pages 1652-1659 Akil. K. Sutton, Kurt Moen, John D. Cressler, Martin A. Carts, Paul W. Marshall, Jonathan A. Pellish, Vishwa Ramachandran, Robert A. Reed, Michael L. Alles and Guofu Niu |
| 34. | Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers Pages 1660-1668 A.T. Pham, C. Jungemann, M. Klawitter and B. Meinerzhagen |
| 35. | Tuning nonlinear susceptibility in strained AlGaAs/InGaAs quantum cascade lasers Pages 1669-1673 Denzil Roberts and Gregory Triplett |
| 36. | Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots Pages 1674-1679 Dae-Seob Han and Levon V. Asryan |
| 37. | An empirical study of dynamic properties of an individual carbon nanotube electron source system Pages 1680-1686 Bryan P. Ribaya, Darrell L. Niemann, Joseph Makarewicz, Norman G. Gunther, Cattien V. Nguyen and Mahmud Rahman |
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