 |
| New Volume/Issue is now available on ScienceDirect |
|
| 1. | Editorial Board Page IFC |
| 2. | Introduction of Dr. Young Kuk Page 997 Young Kuk |
| Reviews |
| 3. | On-chip inductor above dummy metal patterns Pages 998-1001 Heng-Ming Hsu and Ming-Ming Hsieh |
| Regular Papers |
| 4. | 2 MeV ion irradiation effects on AlGaN/GaN HFET devices Pages 1011-1017 G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl and G. Tränkle |
| 5. | Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor Pages 1043-1046 R.W. Chuang, P.C. Tsai, Y.K. Su and C.H. Chu |
| 6. | Reduced band-gap due to phonons in SrTiO3 analyzed by ab initio calculations Pages 1082-1087 Wilfried Wunderlich |
| 7. | Influence of interface state charges on RF performance of LDMOS transistor Pages 1099-1105 A. Kashif, T. Johansson, C. Svensson, S. Azam, T. Arnborg and Q. Wahab |
| 8. | The influence of junction depth on short channel effects in vertical sidewall MOSFETs Pages 1002-1007 Lizhe Tan, Octavian Buiu, Stephen Hall, Enrico Gili, Takashi Uchino and Peter Ashburn |
| Letter |
| 9. | 4H–SiC BJTs with current gain of 110 Pages 1008-1010 Qingchun (Jon) Zhang, Anant Agarwal, Al Burk, Bruce Geil and Charles Scozzie |
| 10. | Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures Pages 1018-1023 Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu and Yin-Shan Huang |
| 11. | Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion Pages 1024-1031 O. Bengtsson, L. Vestling and J. Olsson |
| 12. | Thermionic field emission at electrodeposited Ni–Si Schottky barriers Pages 1032-1038 M.E. Kiziroglou, X. Li, A.A. Zhukov, P.A.J. de Groot and C.H. de Groot |
| 13. | Dependence of backgating on the type of deep centres in the substrate of GaAs FETs Pages 1039-1042 Nouredine Sengouga and Noura A. Abdeslam |
| 14. | Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state Pages 1047-1051 V. Dobrovolsky, F. Sizov, S. Cristoloveanu and S. Pavljuk |
| 15. | Calculation of cosmic ray limited maximum DC blocking voltages of high voltage silicon PIN diodes Pages 1052-1057 Friedhelm D. Bauer |
| 16. | Modeling of double-π equivalent circuit for on-chip symmetric spiral inductors Pages 1058-1063 Yang Tang, Bo Liu, Li Zhang, Jie Pan, Liwu Yang and Yan Wang |
| 17. | Compact model for short channel symmetric doped double-gate MOSFETs Pages 1064-1070 Antonio Cerdeira, Benjamín Iñiguez and Magali Estrada |
| 18. | Effects of surface passivation in porous silicon as H2 gas sensor Pages 1071-1074 N.K. Ali, M.R. Hashim and A. Abdul Aziz |
| 19. | A proposal for enhancement of optical nonlinearity in GaN/AlGaN centered defect quantum box (CDQB) nanocrystal Pages 1075-1081 A. Rostami, H. Rasooli Saghai and H. Baghban Asghari Nejad |
| 20. | Surface-recombination-free InGaAs/InP HBTs and the base contact recombination Pages 1088-1091 Z. Jin, X. Liu, W. Prost and F.-J. Tegude |
| 21. | Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics Pages 1092-1098 Ramón Salazar, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Ching-Sung Ho and Juin J. Liou |
| 22. | Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions Pages 1106-1113 Yanqing Deng, MD Monirul Islam, Mikhail Gaevski, Zijiang Yang, Vinod Adivarahan and Asif Khan |
| Send my e-mail in plain text format |
| Modify or Remove My Alerts |
| Access the ScienceDirect Info site if you have questions about this message or other features of this service. |
| This email has been sent to you by ScienceDirect, a division of Elsevier B.V., Radarweg 29, 1043 NX Amsterdam, The Netherlands, Tel.+31 20 485 3911. ScienceDirect respects your privacy and does not disclose, rent or sell your personal information to any non-affiliated third parties without your consent, except as may be stated in the ScienceDirect online privacy policy. By using email or alert services, you agree to comply with the ScienceDirect Terms and Conditions. To unsubscribe to alert services, please go to the Alerts page. Copyright © 2008 ScienceDirect. All rights reserved. Any unauthorized use, reproduction, or transfer of this message or its contents, in any medium, is strictly prohibited. ScienceDirect® is a registered trademark of Elsevier B.V. Delivery Job ID: 1928:159081788:2927:136109199 |
