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| 1. | Editorial Board Page IFC |
| Review |
| 2. | Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET Pages 597-605 L. Harik, J.M. Sallese and M. Kayal |
| Regular Papers |
| 3. | Low-frequency noise properties of double channel AlGaN/GaN HEMTs Pages 606-611 S.K. Jha, C. Surya, K.J. Chen, K.M. Lau and E. Jelencovic |
| 4. | Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication Pages 612-617 Manav Sheoran, Ajay Upadhyaya and Ajeet Rohatgi |
| 5. | Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD Pages 618-624 S.V. Averine, P.I. Kuznetzov, V.A. Zhitov and N.V. Alkeev |
| 6. | A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs Pages 625-631 G. Krokidis, J.P. Xanthakis and N.K. Uzunoglu |
| 7. | Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs Pages 632-636 V. Desmaris, J.Y. Shiu, N. Rorsman, H. Zirath and E.Y. Chang |
| 8. | Accurate thermal analysis of GaN HFETs Pages 637-643 A.M. Conway, P.M. Asbeck, J.S. Moon and M. Micovic |
| 9. | Growth and optical properties of Zn:Ce:Cu:LiNbO3 single crystals Pages 644-648 Decai Ma, Biao Wang, Rui Wang, Yuan Wei, Hong Cheng Liu and Hai Wang |
| 10. | Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor Pages 649-656 Ya-Hsiang Tai, Shih-Che Huang, Ko-Ching Su and Chen-Yeh Tseng |
| 11. | High-performance white organic light-emitting device using non-doped-type structure Pages 657-662 Huishan Yang, Yanwei Shi, Yi Zhao and Shiyong Liu |
| 12. | Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events Pages 663-674 A. Gendron, P. Renaud, M. Bafleur and N. Nolhier |
| 13. | Realizing high voltage SJ-LDMOS with non-uniform N-buried layer Pages 675-678 Wanjun Chen, Bo Zhang and Zhaoji Li |
| 14. | Ultraviolet Schottky detector based on epitaxial ZnO thin film Pages 679-682 Dayong Jiang, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen and Xiwu Fan |
| 15. | The effects of radiation-induced interface traps on base current in gated bipolar test structures Pages 683-687 X.J. Chen and H.J. Barnaby |
| 16. | A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation Pages 688-694 Xiaochuan Bi, Jack R. East, Umberto Ravaioli and George I. Haddad |
| 17. | Subthreshold characteristics of polysilicon TFTs Pages 695-703 Wanling Deng, Xueren Zheng, Rongsheng Chen and Yuan Liu |
| 18. | Analytical extraction of small and large signal models for FinFET varactors Pages 704-710 Giovanni Crupi, Dominique M.M.-P. Schreurs, Morin Dehan, Dongping Xiao, Alina Caddemi, Abdelkarim Mercha and Stefaan Decoutere |
| 19. | Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics Pages 711-724 Tanvir Hasan Morshed, Siva Prasad Devireddy, Zeynep Çelik-Butler, Ajit Shanware, Keith Green, J.J. Chambers, M.R. Visokay and Luigi Colombo |
| 20. | Microwave performance of field-plate 0.13-μm MOS transistors with varying field-plate extension Pages 725-729 Hsien-Chin Chiu, Shao-Wei Lin, Chia-Shih Cheng and Chien-Cheng Wei |
| 21. | Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors on SOI substrates Pages 730-739 I. Marano, V. d’Alessandro and N. Rinaldi |
| 22. | Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD Pages 740-744 Sher Azam, C. Svensson and Q. Wahab |
| 23. | High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications Pages 745-748 Ping-Chun Yeh, Hwann-Kaeo Chiou, Chwan-Ying Lee, John Yeh, Yi-Hung Tsai, Denny Tang and John Chern |
| 24. | Pressure induced, electronic and optical properties of zincblende InP Pages 749-755 Satyam S. Parashari, S. Kumar and S. Auluck |
| 25. | Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Pages 756-764 Yi Zhou, Claude Ahyi, Tamara Isaacs-Smith, Michael Bozack, Chin-Che Tin, John Williams, Minseo Park, An-jen Cheng, Jung-Hyun Park, Dong-Joo Kim, Dake Wang, Edward A. Preble, Andrew Hanser and Keith Evans |
| 26. | A 10 GHz low phase-noise CMOS voltage-controlled oscillator using dual-transformer technology Pages 765-770 Hsien-Chin Chiu, Chia-Shih Cheng, Yi-Tzu Yang and Chien-Cheng Wei |
| 27. | Modeling non-quasi-static effects in channel thermal noise and induced-gate noise in MOS field-effect transistors Pages 771-774 Abhay Deshpande and R.P. Jindal |
| 28. | Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Pages 775-781 Malin Borg, Eric Lefebvre, Mikael Malmkvist, Ludovic Desplanque, Xavier Wallart, Yannick Roelens, Gilles Dambrine, Alain Cappy, Sylvain Bollaert and Jan Grahn |
| 29. | Hopping photoconductivity and the effectiveness of phonon detection in GaAs:Zn bolometers Pages 782-786 B.M. Taele, Himanshu Narayan and R. Mukaro |
| 30. | Mobility model for compact device modeling of OTFTs made with different materials Pages 787-794 M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal and B. Iñiguez |
| 31. | Dynamics of AlGaN based detectors in the deep-UV Pages 795-800 G. Mazzeo, J.-L. Reverchon, G. Conte, A. Dussaigne and J.-Y. Duboz |
| 32. | High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs Pages 801-807 N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, M. Lokshin, E. Simoen and C. Claeys |
| 33. | The effect of a smart body tie on the bottom-gate thin film transistor Pages 808-812 Jyi-Tsong Lin, Kuo-Dong Huang and Shu-Fen Hu |
| 34. | Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering Pages 813-816 R. Navamathavan, Chi Kyu Choi, Eun-Jeong Yang, Jae-Hong Lim, Dae-Kue Hwang and Seong-Ju Park |
| 35. | Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique Pages 817-823 Hai Lu, Dongsheng Cao, Xiangqian Xiu, Zili Xie, Rong Zhang, Youdou Zheng and Zhonghui Li |
| 36. | Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs Pages 824-829 Sung Jun Jang, Dae Hyun Ka, Chong Gun Yu, Won-Ju Cho and Jong Tae Park |
| 37. | Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs Pages 830-837 A. Cerdeira, O. Moldovan, B. Iñiguez and M. Estrada |
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