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| 1. | Editorial Board Page IFC |
| Ultimate Integration on Silicon Conference 2007 |
| Ultimate Integration on Silicon Conference 2007 |
| 2. | Foreword Page 488 Youri V. Ponomarev |
| 3. | In-depth electrical characterization of sub-45 nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack Pages 489-497 S. Feruglio, F. Andrieu, O. Faynot and G. Ghibaudo |
| 4. | On the electron mobility enhancement in biaxially strained Si MOSFETs Pages 498-505 F. Driussi, D. Esseni, L. Selmi, P.-E. Hellström, G. Malm, J. Ha˚llstedt, M. Östling, T.J. Grasby, D.R. Leadley and X. Mescot |
| 5. | Monte-Carlo simulation of MOSFETs with band offsets in the source and drain Pages 506-513 M. Braccioli, P. Palestri, M. Mouis, T. Poiroux, M. Vinet, G. Le Carval, C. Fiegna, E. Sangiorgi and S. Deleonibus |
| 6. | Mobility in graphene double gate field effect transistors Pages 514-518 M.C. Lemme, T.J. Echtermeyer, M. Baus, B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink and H. Kurz |
| 7. | 3D nanowire gate-all-around transistors: Specific integration and electrical features Pages 519-525 C. Dupré, T. Ernst, V. Maffini-Alvaro, V. Delaye, J.-M. Hartmann, S. Borel, C. Vizioz, O. Faynot, G. Ghibaudo and S. Deleonibus |
| 8. | Theoretical foundations of the quantum drift-diffusion and density-gradient models Pages 526-532 Giorgio Baccarani, Elena Gnani, Antonio Gnudi, Susanna Reggiani and Massimo Rudan |
| 9. | Novel concepts for improved communication between nerve cells and silicon electronic devices Pages 533-539 Roeland Huys, Dries Braeken, Bart Van Meerbergen, Kurt Winters, Wolfgang Eberle, Josine Loo, Diana Tsvetanova, Chang Chen, Simone Severi, S. Yitzchaik, M. Spira, J. Shappir, Geert Callewaert, Gustaaf Borghs and Carmen Bartic |
| 10. | Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials Pages 540-547 Quentin Rafhay, Raphaël Clerc, Marlène Ferrier, Georges Pananakakis and Gérard Ghibaudo |
| International Conference on Memory Technology 2007 |
| International Conference on Memory Technology 2007 |
| 11. | Foreword Page 549 Jan Van Houdt |
| 12. | Use of Al2O3 as inter-poly dielectric in a production proven 130 nm embedded Flash technology Pages 550-556 R. Kakoschke, L. Pescini, J.R. Power, K. van der Zanden, E.-O. Andersen, Y. Gong and R. Allinger |
| 13. | Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory Pages 557-563 B. Govoreanu, D. Wellekens, L. Haspeslagh, D.P. Brunco, J. De Vos, D. Ruiz Aguado, P. Blomme, K. van der Zanden and J. Van Houdt |
| 14. | Multi-layer high-κ interpoly dielectric for floating gate flash memory devices Pages 564-570 Lu Zhang, Wei He, Daniel S.H. Chan and Byung Jin Cho |
| 15. | Charge cross talk in sub-lithographically shrinked 32 nm Twin Flash™ memory cells Pages 571-576 M.F. Beug, R. Knöfler, C. Ludwig, R. Hagenbeck, T. Müller, S. Riedel, T. Höhr, J.-U. Sachse, N. Nagel, T. Mikolajick and K.-H. Küsters |
| 16. | Physical understanding and modeling of SANOS retention in programmed state Pages 577-583 Arnaud Furnémont, Antonio Cacciato, Laurent Breuil, Maarten Rosmeulen, Herman Maes, Kristin De Meyer and Jan Van Houdt |
| 17. | Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics Pages 584-590 D. Mantegazza, D. Ielmini, A. Pirovano, A.L. Lacaita, E. Varesi, F. Pellizzer and R. Bez |
| 18. | Writing current reduction and total set resistance analysis in PRAM Pages 591-595 C.W. Jeong, D.H. Kang, D.W. Ha, Y.J. Song, J.H. Oh, J.H. Kong, J.H. Yoo, J.H. Park, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, Y.T. Oh, J.S. Kim, J.M. Shin, Jaehyun Park, Y. Fai, G.H. Koh, G.T. Jeong, H.S. Jeong and Kinam Kim |
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