Table of Contents Alert for Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Journal of Vacuum Society and Technology B

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures -- January 2008

Volume 26, Issue 1 , pp. L1-442

[ Previous Issue | Available Volumes | Issue Index ]

Letters Regular Articles Brief Reports and Comments INTERNATIONAL WORKSHOP ON INSIGHT IN SEMICONDUCTOR DEVICE FABRICATION, METROLOGY, AND MODELING (INSIGHT 2007) Plenary Session Fabrication: Advanced Anneals and Implant New Approaches to Dopant Profiling Poster Session Defect Formation, Evolution, and Impact Non-Planar Structures High Resolution 2-D Metrology with SPM Enhanced 1D Metrology Germanium Stress Effects

Letters
	Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition Jung Hyeun Kim pp. L1-L6 Abstract    Full Text: [ HTML Sectioned HTML   PDF (339 kB)  GZipped PS   ]    Order
	Boron nanobelts grown under intensive ion bombardment W. T. Li, R. Boswell, and J. D. Fitz Gerald pp. L7-L9 Abstract    Full Text: [ HTML Sectioned HTML   PDF (226 kB)  GZipped PS   ]    Order
	Fabrication of ideally ordered anodic porous alumina with large area by vacuum deposition of Al onto mold Kazuyuki Nishio, Takashi Yanagishita, Sho Hatakeyama, Hiroaki Maegawa, and Hideki Masuda pp. L10-L12 Abstract    Full Text: [ HTML Sectioned HTML   PDF (441 kB)  GZipped PS   ]    Order
	Flexible polymeric rib waveguide with self-align couplers system Cheng-Sheng Huang and Wei-Chih Wang pp. L13-L18 Abstract    Full Text: [ HTML Sectioned HTML   PDF (512 kB)  GZipped PS   ]    Order
	Reducing imaging defects in high-resolution photolithography Fei Wang and William A. Stanton pp. L19-L22 Abstract    Full Text: [ HTML Sectioned HTML   PDF (327 kB)  GZipped PS   ]    Order
Regular Articles
	Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes Rubo Xing, Yu Xuan, Dongge Ma, and Yanchun Han pp. 1-5 Abstract    Full Text: [ HTML Sectioned HTML   PDF (443 kB)  GZipped PS   ]    Order
	Fabrication and performance of nanoscale ultrasmooth programed defects for extreme ultraviolet lithography D. L. Olynick, F. Salmassi, J. A. Liddle, P. B. Mirkarimi, E. Spiller, S. L. Baker, and J. Robinson pp. 6-10 Abstract    Full Text: [ HTML Sectioned HTML   PDF (725 kB)  GZipped PS   ]    Order
	Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F8/Ar and CF4/H2 based capacitively coupled plasmas Li Ling, X. Hua, L. Zheng, G. S. Oehrlein, E. A. Hudson, and P. Jiang pp. 11-22 Abstract    Full Text: [ HTML Sectioned HTML   PDF (700 kB)  GZipped PS   ]    Order
	Mobility-diffusivity relationship for semiconductor nanowires Arif Khan and S. Noor Mohammad pp. 23-27 Abstract    Full Text: [ HTML Sectioned HTML   PDF (316 kB)  GZipped PS   ]    Order
	Double oxidation scheme for tunnel junction fabrication T. Holmqvist, M. Meschke, and J. P. Pekola pp. 28-31 Abstract    Full Text: [ HTML Sectioned HTML   PDF (263 kB)  GZipped PS   ]    Order
	Turn-on field distribution of field-emitting sites in carbon nanotube film: Study with luminescent image Weihua Liu, Fanguang Zeng, Li Xin, Changchun Zhu, and Yongning He pp. 32-35 Abstract    Full Text: [ HTML Sectioned HTML   PDF (685 kB)  GZipped PS   ]    Order
	Exposure latitude of deep-ultraviolet conformable contact photolithography C. P. Fucetola, D. J. D. Carter, and J. G. Goodberlet pp. 36-40 Abstract    Full Text: [ HTML Sectioned HTML   PDF (500 kB)  GZipped PS   ]    Order
	Structural and electrical investigation of laser annealed (Pb,Sr)TiO3 thin films Jyh-Liang Wang, Yi-Sheng Lai, Sz-Chian Liou, Bi-Shiou Chiou, Chueh-Kuei Jan, and Huang-Chung Cheng pp. 41-46 Abstract    Full Text: [ HTML Sectioned HTML   PDF (414 kB)  GZipped PS   ]    Order
	Enhanced local oxidation of silicon using a conducting atomic force microscope in water A. M. Hilton, K. W. Jacobson, B. P. Lynch, and G. J. Simpson pp. 47-51 Abstract    Full Text: [ HTML Sectioned HTML   PDF (382 kB)  GZipped PS   ]    Order
	Optical properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5−50  µm) IR range A. B. Weerasekara, Z. G. Hu, N. Dietz, A. G. U. Perera, A. Asghar, M. H. Kane, M. Strassburg, and I. T. Ferguson pp. 52-55 Abstract    Full Text: [ HTML Sectioned HTML   PDF (330 kB)  GZipped PS   ]    Order
	GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers S.-Q. Yu, Y. Cao, S. R. Johnson, Y.-H. Zhang, and Y.-Z. Huang pp. 56-61 Abstract    Full Text: [ HTML Sectioned HTML   PDF (110 kB)  GZipped PS   ]    Order
	Grayscale lithography by a polymer photomask doped with laser dye N. S. Korivi, Y. X. Zhou, and L. Jiang pp. 62-66 Abstract    Full Text: [ HTML Sectioned HTML   PDF (317 kB)  GZipped PS   ]    Order
	Improvement of the wiggling profile of spin-on carbon hard mask by H2 plasma treatment M. Tadokoro, K. Yonekura, K. Yoshikawa, Y. Ono, T. Ishibashi, T. Hanawa, N. Fujiwara, T. Matsunobe, and K. Matsuda pp. 67-71 Abstract    Full Text: [ HTML Sectioned HTML   PDF (665 kB)  GZipped PS   ]    Order
	Nonlocal reduced boron diffusivity in silicon below strained Si1−xGex surfaces Malcolm S. Carroll, Y. S. Suh, and R. Levy pp. 72-75 Abstract    Full Text: [ HTML Sectioned HTML   PDF (461 kB)  GZipped PS   ]    Order
	Nanostructuring GaN using microsphere lithography W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi pp. 76-79 Abstract    Full Text: [ HTML Sectioned HTML   PDF (419 kB)  GZipped PS   ]    Order
	Flare-variation compensation for 32  nm line and space pattern for device manufacturing on extreme-ultraviolet lithography H. Aoyama, N. Iriki, and T. Tanaka pp. 80-83 Abstract    Full Text: [ HTML Sectioned HTML   PDF (522 kB)  GZipped PS   ]    Order
	Potential of phase-shifted optical proximity correction for 65  nm T-shaped pattern in high numerical aperture lithography Songbo Gao and Yanqiu Li pp. 84-88 Abstract    Full Text: [ HTML Sectioned HTML   PDF (493 kB)  GZipped PS   ]    Order
	Atomic diffusion and interface electronic structure at In0.49Ga0.51P/GaAs heterojunctions P. E. Smith, M. Lueck, S. A. Ringel, and L. J. Brillson pp. 89-95 Abstract    Full Text: [ HTML Sectioned HTML   PDF (646 kB)  GZipped PS   ]    Order
	Study of pretreatment prior to silicon-oxycarbide deposition on Cu interconnect Chun-Chieh Huang, Jow-Lay Huang, Ying-Lang Wang, and Kuang-Yao Lo pp. 96-101 Abstract    Full Text: [ HTML Sectioned HTML   PDF (757 kB)  GZipped PS   ]    Order
	Surface structure characterization of nanodiamond thin film for electronic field emission applications F. Y. Xie, W. G. Xie, J. Chen, X. Liu, D. Y. Lu, and W. H. Zhang pp. 102-105 Abstract    Full Text: [ HTML Sectioned HTML   PDF (92 kB)  GZipped PS   ]    Order
	Study of high-brightness flat-panel lighting source using carbon-nanotube cathode Yu Zhang, S. Z. Deng, C. Y. Duan, Jun Chen, and N. S. Xu pp. 106-109 Abstract    Full Text: [ HTML Sectioned HTML   PDF (311 kB)  GZipped PS   ]    Order
	Effective energy densities in KrF excimer laser reformation as a sidewall smoothing technique Eih-Zhe Liang, Shih-Che Hung, Ya-Ping Hsieh, and Ching-Fuh Lin pp. 110-116 Abstract    Full Text: [ HTML Sectioned HTML   PDF (419 kB)  GZipped PS   ]    Order
	Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates Ji-Soo Park, Jie Bai, Michael Curtin, Mark Carroll, and Anthony Lochtefeld pp. 117-121 Abstract    Full Text: [ HTML Sectioned HTML   PDF (252 kB)  GZipped PS   ]    Order
	Fabrication of silicon kinoform lenses for hard x-ray focusing by electron beam lithography and deep reactive ion etching Aaron Stein, Kenneth Evans-Lutterodt, Natasha Bozovic, and Ashley Taylor pp. 122-127 Abstract    Full Text: [ HTML Sectioned HTML   PDF (547 kB)  GZipped PS   ]    Order
	Photoresist characterization using double exposures with interference lithography Thomas B. O'Reilly and Henry I. Smith pp. 128-131 Abstract    Full Text: [ HTML Sectioned HTML   PDF (160 kB)  GZipped PS   ]    Order
	Novel hydrostatic pressuring mechanism for soft UV-imprinting processes Fang-Sung Cheng, Sen-Yeu Yang, and Chien-Chang Chen pp. 132-136 Abstract    Full Text: [ HTML Sectioned HTML   PDF (546 kB)  GZipped PS   ]    Order
	Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes Myungsim Jun, Moongyu Jang, Yarkeon Kim, Cheljong Choi, Taeyoub Kim, Soonyoung Oh, and Seongjae Lee pp. 137-140 Abstract    Full Text: [ HTML Sectioned HTML   PDF (120 kB)  GZipped PS   ]    Order
	Effect of temperature on copper damascene chemical mechanical polishing process Veera Raghava Kakireddy, Subrahmanya Mudhivarthi, and Ashok Kumar pp. 141-150 Abstract    Full Text: [ HTML Sectioned HTML   PDF (668 kB)  GZipped PS   ]    Order
	Patterned wafer defect density analysis of step and flash imprint lithography I. McMackin, W. Martin, J. Perez, K. Selinidis, J. Maltabes, F. Xu, D. Resnick, and S. V. Sreenivasan pp. 151-155 Abstract    Full Text: [ HTML Sectioned HTML   PDF (475 kB)  GZipped PS   ]    Order
	Soft photocurable nanoimprint lithography for compound semiconductor nanostructures K. Meneou and K. Y. Cheng pp. 156-158 Abstract    Full Text: [ HTML Sectioned HTML   PDF (377 kB)  GZipped PS   ]    Order
	Electrical conductivity of ultra-thin silicon nanowires Nabil Rochdi, Didier Tonneau, Franck Jandard, Hervé Dallaporta, Viatcheslav Safarov, and Jacques Gautier pp. 159-163 Abstract    Full Text: [ HTML Sectioned HTML   PDF (314 kB)  GZipped PS   ]    Order
	Erbium silicide formation and its contact properties on Si(100) W. Huang, G. P. Ru, Y. L. Jiang, X. P. Qu, B. Z. Li, R. Liu, and F. Lu pp. 164-170 Abstract    Full Text: [ HTML Sectioned HTML   PDF (499 kB)  GZipped PS   ]    Order
	Luminescence uniformity studies on dendrite bamboo carbon submicron-tube field-emitter arrays Xin Li, Fuqiang Ding, Weihua Liu, Yongning He, and Changchun Zhu pp. 171-174 Abstract    Full Text: [ HTML Sectioned HTML   PDF (368 kB)  GZipped PS   ]    Order
	Structural and electrical studies of conductive nanowires prepared by focused ion beam induced deposition A. Reguer, F. Bedu, D. Tonneau, H. Dallaporta, M. Prestigiacomo, A. Houel, and P. Sudraud pp. 175-180 Abstract    Full Text: [ HTML Sectioned HTML   PDF (719 kB)  GZipped PS   ]    Order
	Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes R. Ramos, G. Cunge, and O. Joubert pp. 181-188 Abstract    Full Text: [ HTML Sectioned HTML   PDF (406 kB)  GZipped PS   ]    Order
	Hybrid nanofabrication processes utilizing diblock copolymer nanotemplate prepared by self-assembled monolayer based surface neutralization Su-Jin Kim, W. J. Maeng, S. K. Lee, D. H. Park, Sung Hwan Bang, Hyungjun Kim, and Byeong-Hyeok Sohn pp. 189-194 Abstract    Full Text: [ HTML Sectioned HTML   PDF (581 kB)  GZipped PS   ]    Order
	Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy Kentaro Watanabe, Yoshiaki Nakamura, and Masakazu Ichikawa pp. 195-200 Abstract    Full Text: [ HTML Sectioned HTML   PDF (498 kB)  GZipped PS   ]    Order
	Inelastic deformability of nanopillar by focused-ion-beam chemical vapor deposition Yoji Shibutani and Toshiyuki Yoshioka pp. 201-205 Abstract    Full Text: [ HTML Sectioned HTML   PDF (431 kB)  GZipped PS   ]    Order
	Fabrication of single-crystalline LiTaO3 film on silicon substrate using thin film transfer technology Weili Liu, Da Zhan, Xiaobo Ma, Zhitang Song, and Songlin Feng pp. 206-208 Abstract    Full Text: [ HTML Sectioned HTML   PDF (377 kB)  GZipped PS   ]    Order
	Description of field emission current/voltage characteristics in terms of scaled barrier field values (f-values) Richard G. Forbes pp. 209-213 Abstract    Full Text: [ HTML Sectioned HTML   PDF (137 kB)  GZipped PS   ]    Order
	Low-temperature c-axis oriented growth of nanocrystalline ZnO thin films on Si substrates by plasma assisted pulsed laser deposition J. Shao, Y. Q. Shen, J. Sun, N. Xu, D. Yu, Y. F. Lu, and J. D. Wu pp. 214-218 Abstract    Full Text: [ HTML Sectioned HTML   PDF (363 kB)  GZipped PS   ]    Order
	Mechanistic study of plasma damage of low k dielectric surfaces J. Bao, H. Shi, J. Liu, H. Huang, P. S. Ho, M. D. Goodner, M. Moinpour, and G. M. Kloster pp. 219-226 Abstract    Full Text: [ HTML Sectioned HTML   PDF (319 kB)  GZipped PS   ]    Order
	Surface plasmon assisted contact scheme nanoscale photolithography using an UV lamp Dongbing Shao and Shaochen Chen pp. 227-231 Abstract    Full Text: [ HTML Sectioned HTML   PDF (443 kB)  GZipped PS   ]    Order
	Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks Y. M. Strzhemechny, M. Bataiev, S. P. Tumakha, S. H. Goss, C. L. Hinkle, C. C. Fulton, G. Lucovsky, and L. J. Brillson pp. 232-243 Abstract    Full Text: [ HTML Sectioned HTML   PDF (313 kB)  GZipped PS   ]    Order
	Novel photocurable epoxy siloxane polymers for photolithography and imprint lithography applications Pei-I Wang, O. Nalamasu, Rajat Ghoshal, Ram Ghoshal, Charles D. Schaper, Andrew Li, and Toh-Ming Lu pp. 244-248 Abstract    Full Text: [ HTML Sectioned HTML   PDF (438 kB)  GZipped PS   ]    Order
	Proximity effects in nanoscale patterning with high resolution electron beam induced deposition Peter A. Crozier pp. 249-254 Abstract    Full Text: [ HTML Sectioned HTML   PDF (613 kB)  GZipped PS   ]    Order
	Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing Chi-Cheng Hung, Wen-Hsi Lee, Shao-Yu Hu, Shih-Chieh Chang, Kei-Wei Chen, and Ying-Lang Wang pp. 255-259 Abstract    Full Text: [ HTML Sectioned HTML   PDF (584 kB)  GZipped PS   ]    Order
Brief Reports and Comments
	Hot embossing by Joule heating J. C. Lee, I. C. Leu, K. L. Lai, and M. H. Hon pp. 260-263 Abstract    Full Text: [ HTML Sectioned HTML   PDF (318 kB)  GZipped PS   ]    Order
INTERNATIONAL WORKSHOP ON INSIGHT IN SEMICONDUCTOR DEVICE FABRICATION, METROLOGY, AND MODELING (INSIGHT 2007) Plenary Session [ Next Subject | Issue Index | Top / Bottom of Page]
	Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing Hans-Joachim L. Gossmann pp. 267-272 Abstract    Full Text: [ HTML Sectioned HTML   PDF (109 kB)  GZipped PS   ]    Order
	Simulation of doping profile formation: Historical evolution, and present strengths and weaknesses C. Zechner and V. Moroz pp. 273-280 Abstract    Full Text: [ HTML Sectioned HTML   PDF (103 kB)  GZipped PS   ]    Order
Fabrication: Advanced Anneals and Implant [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing S. B. Felch, E. Collart, V. Parihar, S. Thirupapuliyur, R. Schreutelkamp, B. J. Pawlak, T. Hoffmann, S. Severi, P. Eyben, W. Vandervorst, and T. Noda pp. 281-285 Abstract    Full Text: [ HTML Sectioned HTML   PDF (469 kB)  GZipped PS   ]    Order
	Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing V. Vervisch, H. Etienne, F. Torregrosa, L. Roux, L. Ottaviani, M. Pasquinelli, T. Sarnet, and P. Delaporte pp. 286-292 Abstract    Full Text: [ HTML Sectioned HTML   PDF (970 kB)  GZipped PS   ]    Order
	Optimum activation and diffusion with a combination of spike and flash annealing S. Paul, W. Lerch, J. Chan, S. McCoy, J. Gelpey, F. Cristiano, F. Severac, P. F. Fazzini, and D. Bolze pp. 293-297 Abstract    Full Text: [ HTML Sectioned HTML   PDF (518 kB)  GZipped PS   ]    Order
New Approaches to Dopant Profiling [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering G. Saheli, G. Conti, Y. Uritsky, M. A. Foad, C. R. Brundle, P. Mack, D. Kouzminov, M. Werner, and J. A. van den Berg pp. 298-304 Abstract    Full Text: [ HTML Sectioned HTML   PDF (681 kB)  GZipped PS   ]    Order
Poster Session [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Bragg diffraction, synchrotron x-ray reflectance, and x-ray photoelectron spectroscopy studies of low temperature plasma oxidation of native SiO2 on silicon on insulator M. Bhargava, W. Donner, A. K. Srivastava, and J. C. Wolfe pp. 305-309 Abstract    Full Text: [ HTML Sectioned HTML   PDF (354 kB)  GZipped PS   ]    Order
	Advances in optical carrier profiling through high-frequency modulated optical reflectance Janusz Bogdanowicz, Fabian Dortu, Trudo Clarysse, Wilfried Vandervorst, Derrick Shaughnessy, Alex Salnik, Lena Nicolaides, and Jon Opsal pp. 310-316 Abstract    Full Text: [ HTML Sectioned HTML   PDF (514 kB)  GZipped PS   ]    Order
	Advanced carrier depth profiling on Si and Ge with micro four-point probe Trudo Clarysse, Pierre Eyben, Brigitte Parmentier, Benny Van Daele, Alessandra Satta, Wilfried Vandervorst, Rong Lin, Dirch Hjorth Petersen, and Peter Folmer Nielsen pp. 317-321 Abstract    Full Text: [ HTML Sectioned HTML   PDF (122 kB)  GZipped PS   ]    Order
	Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves Fabian Dortu, Janusz Bogdanowicz, Trudo Clarysse, and Wilfried Vandervorst pp. 322-332 Abstract    Full Text: [ HTML Sectioned HTML   PDF (913 kB)  GZipped PS   ]    Order
	Effect of low Ge content on B diffusion in amorphous SiGe alloys L. A. Edelman, R. G. Elliman, L. Rubin, L. Washington, and K. S. Jones pp. 333-337 Abstract    Full Text: [ HTML Sectioned HTML   PDF (845 kB)  GZipped PS   ]    Order
	Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy Pierre Eyben, Jay Mody, Sri Charan Vemula, and Wilfried Vandervorst pp. 338-341 Abstract    Full Text: [ HTML Sectioned HTML   PDF (362 kB)  GZipped PS   ]    Order
	Defect evolution after germanium preamorphization in silicon on insulator structures P. F. Fazzini, F. Cristiano, C. Dupré, A. Claverie, T. Ernst, and M. Gavelle pp. 342-346 Abstract    Full Text: [ HTML Sectioned HTML   PDF (390 kB)  GZipped PS   ]    Order
	Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant M. Kah, A. J. Smith, J. J. Hamilton, J. Sharp, S. H. Yeong, B. Colombeau, R. Gwilliam, R. P. Webb, and K. J. Kirkby pp. 347-350 Abstract    Full Text: [ HTML Sectioned HTML   PDF (379 kB)  GZipped PS   ]    Order
	Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures Jay Mody, Pierre Eyben, Emmanuel Augendre, Olivier Richard, and Wilfried Vandervorst pp. 351-356 Abstract    Full Text: [ HTML Sectioned HTML   PDF (1037 kB)  GZipped PS   ]    Order
	Level set modeling of the orientation dependence of solid phase epitaxial regrowth Saurabh Morarka, N. G. Rudawski, and Mark E. Law pp. 357-361 Abstract    Full Text: [ HTML Sectioned HTML   PDF (872 kB)  GZipped PS   ]    Order
	Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions Dirch Hjorth Petersen, Rong Lin, Torben Mikael Hansen, Erik Rosseel, Wilfried Vandervorst, Christian Markvardsen, Daniel Kjær, and Peter Folmer Nielsen pp. 362-367 Abstract    Full Text: [ HTML Sectioned HTML   PDF (510 kB)  GZipped PS   ]    Order
	Boron cathodic arc as an ion source for shallow junction ion implantation of boron J. M. Williams, C. C. Klepper, D. J. Chivers, R. C. Hazelton, and J. J. Moschella pp. 368-372 Abstract    Full Text: [ HTML Sectioned HTML   PDF (378 kB)  GZipped PS   ]    Order
Defect Formation, Evolution, and Impact [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Properties of ultralow energy boron implants using octadecaborane M. S. Ameen, L. M. Rubin, M. A. Harris, and C. Huynh pp. 373-376 Abstract    Full Text: [ HTML Sectioned HTML   PDF (638 kB)  GZipped PS   ]    Order
	Evolution of fluorine and boron profiles during annealing in crystalline Si Pedro López, Lourdes Pelaz, Ray Duffy, P. Meunier-Beillard, F. Roozeboom, K. van der Tak, P. Breimer, J. G. M. van Berkum, M. A. Verheijen, and M. Kaiser pp. 377-381 Abstract    Full Text: [ HTML Sectioned HTML   PDF (460 kB)  GZipped PS   ]    Order
	B clustering in amorphous Si D. De Salvador, G. Bisognin, M. Di Marino, E. Napolitani, A. Carnera, S. Mirabella, E. Pecora, E. Bruno, F. Priolo, H. Graoui, M. A. Foad, and F. Boscherini pp. 382-385 Abstract    Full Text: [ HTML Sectioned HTML   PDF (263 kB)  GZipped PS   ]    Order
	He implantation to control B diffusion in crystalline and preamorphized Si E. Bruno, S. Mirabella, F. Priolo, K. Kuitunen, F. Tuomisto, J. Slotte, F. Giannazzo, C. Bongiorno, V. Raineri, and E. Napolitani pp. 386-390 Abstract    Full Text: [ HTML Sectioned HTML   PDF (325 kB)  GZipped PS   ]    Order
	Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? N. S. Bennett, A. J. Smith, R. M. Gwilliam, R. P. Webb, B. J. Sealy, N. E. B. Cowern, L. O'Reilly, and P. J. McNally pp. 391-395 Abstract    Full Text: [ HTML Sectioned HTML   PDF (290 kB)  GZipped PS   ]    Order
Non-Planar Structures [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Probing doping conformality in fin shaped field effect transistor structures using resistors W. Vandervorst, M. Jurczak, J.-L. Everaert, B. J. Pawlak, R. Duffy, J.-I. Del-Agua-Bomiquel, and T. Poon pp. 396-401 Abstract    Full Text: [ HTML Sectioned HTML   PDF (537 kB)  GZipped PS   ]    Order
	Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance R. Duffy, G. Curatola, B. J. Pawlak, G. Doornbos, K. van der Tak, P. Breimer, J. G. M. van Berkum, and F. Roozeboom pp. 402-407 Abstract    Full Text: [ HTML Sectioned HTML   PDF (432 kB)  GZipped PS   ]    Order
High Resolution 2-D Metrology with SPM [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Application of electron holography to analysis of submicron structures M. A. Gribelyuk, A. G. Domenicucci, P. A. Ronsheim, J. S. McMurray, and O. Gluschenkov pp. 408-414 Abstract    Full Text: [ HTML Sectioned HTML   PDF (943 kB)  GZipped PS   ]    Order
	Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy L. Bolotov, M. Nishizawa, T. Kanayama, and Y. Miura pp. 415-419 Abstract    Full Text: [ HTML Sectioned HTML   PDF (464 kB)  GZipped PS   ]    Order
Enhanced 1D Metrology [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor Trudo Clarysse, Alain Moussa, Thomas Zangerle, Frederic Schaus, Wilfried Vandervorst, Vladimir Faifer, and Michael Current pp. 420-424 Abstract    Full Text: [ HTML Sectioned HTML   PDF (396 kB)  GZipped PS   ]    Order
Germanium [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Defects in Ge and Si caused by 1  MeV Si+ implantation D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman, and E. E. Haller pp. 425-429 Abstract    Full Text: [ HTML Sectioned HTML   PDF (449 kB)  GZipped PS   ]    Order
	P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation M. Posselt, B. Schmidt, W. Anwand, R. Grötzschel, V. Heera, A. Mücklich, C. Wündisch, W. Skorupa, H. Hortenbach, S. Gennaro, M. Bersani, D. Giubertoni, A. Möller, and H. Bracht pp. 430-434 Abstract    Full Text: [ HTML Sectioned HTML   PDF (443 kB)  GZipped PS   ]    Order
Stress Effects [ Previous / Next Subject | Issue Index | Top / Bottom of Page]
	Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers N. G. Rudawski, K. S. Jones, and R. G. Elliman pp. 435-438 Abstract    Full Text: [ HTML Sectioned HTML   PDF (225 kB)  GZipped PS   ]    Order
	Dissolution of extended defects in strained silicon Victor Moroz, Ignacio Martin-Bragado, Susan Felch, Faran Nouri, Chris Olsen, and Kevin S. Jones pp. 439-442 Abstract    Full Text: [ HTML Sectioned HTML   PDF (412 kB)  GZipped PS   ]    Order

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