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| 1. | Editorial Board Page IFC |
| 2. | Foreword Page 341 Guglielmo Fortunato |
| 3. | Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation Pages 342-347 Ming-Wen Ma, Chih-Yang Chen, Chun-Jung Su, Woei-Cherng Wu, Tsung-Yu Yang, Kuo-Hsing Kao, Tien-Sheng Chao and Tan-Fu Lei |
| 4. | Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic Pages 348-352 A. Pecora, L. Maiolo, M. Cuscunà, D. Simeone, A. Minotti, L. Mariucci and G. Fortunato |
| 5. | Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization Pages 353-358 Ryoichi Ishihara, Vikas Rana, Ming He, Y. Hiroshima, S. Inoue, Wim Metselaar and Kees Beenakker |
| 6. | Progress in fabrication processing of thin film transistors Pages 359-364 Kazuya Yoshioka, Toshiyuki Sameshima and Naoki Sano |
| 7. | High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization Pages 365-371 Chun-Chien Tsai, Yao-Jen Lee, Jyh-Liang Wang, Kai-Fang Wei, I-Che Lee, Chih-Chung Chen and Huang-Chung Cheng |
| 8. | Three-dimensionally stacked poly-Si TFT CMOS inverter with high quality laser crystallized channel on Si substrate Pages 372-376 Soon-Young Oh, Chang-Geun Ahn, Jong-Heon Yang, Won-Ju Cho, Woo-Hyun Lee, Hyun-Mo Koo and Seong-Jae Lee |
| 9. | Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet Pages 377-380 T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami and S. Miyazaki |
| 10. | Role of hydrogen in excimer laser annealing of hydrogen-modulation doped a-Si film Pages 381-387 Akira Heya, Naoto Matsuo, Tadashi Serikawa and Naoya Kawamoto |
| 11. | Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs – Effects of gate width variation and device orientation Pages 388-393 Giannis P. Kontogiannopoulos, Filippos V. Farmakis, Dimitrios N. Kouvatsos, George J. Papaioannou and Apostolos T. Voutsas |
| 12. | Investigation of the undershoot effect in polycrystalline silicon thin film transistors Pages 394-399 L. Michalas, G.J. Papaioannou, D.N. Kouvatsos and A.T. Voutsas |
| 13. | Universal compact model for long- and short-channel Thin-Film Transistors Pages 400-405 Benjamin Iñiguez, Rodrigo Picos, Dmitry Veksler, A. Koudymov, Michael S. Shur, Trond Ytterdal and Warren Jackson |
| 14. | Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edges Pages 406-411 M. Rapisarda, L. Mariucci, A. Valletta, A. Pecora, G. Fortunato, C. Caligiore, E. Fontana, S. Leonardi and F. Tramontana |
| 15. | Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer Pages 412-416 L. Mariucci, D. Simeone, S. Cipolloni, L. Maiolo, A. Pecora, G. Fortunato and S. Brotherton |
| 16. | OFET for gas sensing based on SuMBE grown pentacene films Pages 417-421 Tullio Toccoli, Alessia Pallaoro, Matteo Tonezzer, Nicola Coppedè and Salvatore Iannotta |
| 17. | Critical issues in plasma deposition of microcrystalline silicon for thin film transistors Pages 422-426 Pere Roca i Cabarrocas, Yassine Djeridane, V.D. Bui, Yvan Bonnassieux and Alexey Abramov |
| 18. | All hot wire CVD TFTs with high deposition rate silicon nitride (3 nm/s) Pages 427-431 R.E.I. Schropp, S. Nishizaki, Z.S. Houweling, V. Verlaan, C.H.M. van der Werf and H. Matsumura |
| 19. | Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors Pages 432-435 Maher Oudwan, Alexey Abramov, Pere Roca i Cabarrocas and François Templier |
| 20. | Specific spice modeling of microcrystalline silicon TFTs Pages 436-442 O. Moustapha, V.D. Bui, Y. Bonnassieux and J.Y. Parey |
| 21. | High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors Pages 443-448 E. Fortunato, P. Barquinha, G. Gonçalves, L. Pereira and R. Martins |
| 22. | Source-gated thin-film transistors Pages 449-454 J.M. Shannon and F. Balon |
| 23. | Area laser crystallized LTPS TFTs with implanted contacts for active matrix OLED displays Pages 455-461 Efstathios Persidis, Holger Baur, Fabio Pieralisi, Patrick Schalberger and Norbert Fruehauf |
| 24. | New PMOS LTPS–TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving Pages 462-466 Jae-Hoon Lee, Sang-Geun Park, Sang-Myeon Han, Min-Koo Han and Kee-Chan Park |
| 25. | Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch Pages 467-472 Jae-Hoon Lee, Hyun-Sang Park, Jae-Hong Jeon and Min-Koo Han |
| 26. | Mechanical stability of poly-Si TFT on metal foil Pages 473-477 Jun Hyuk Cheon, Jung Ho Bae and Jin Jang |
| 27. | A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display Pages 478-481 Se Hwan Kim, Eung Bum Kim, Hee Yeon Choi, Moon Hyo Kang, Ji Ho Hur and Jin Jang |
| 28. | Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon Pages 482-486 J.H. Oh, K.W. Ahn, D.H. Kang, W.H. Park, J. Jang, Y.J. Chang, J.B. Choi, H.K. Min and C.W. Kim |
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